What is it about?
We made Ba-doped bismuth iron oxyfluoride thin films that show both ferroelectricity and magnetism at room temperature. Ba helps add fluorine to the films. These results suggest that oxyfluorides can be used as room-temperature multiferroics.
Featured Image
Why is it important?
Our results show that oxygen vacancies in the precursor films play an important role in the introduction of fluorine into the precursor. The fabricated Ba-doped bismuth iron oxyfluoride thin films exhibit ferroelectricity and a finite small magnetization at 300 K. Moreover, electronic structures due to the F 2p states were formed in the valence and conduction bands of the Ba-doped bismuth iron oxyfluoride thin films.
Perspectives
The oxyfluoride compounds are expected to expand the field of multiferroic materials research.
Akira Chikamatsu
Ochanomizu University
Read the Original
This page is a summary of: Ferroelectricity and magnetic order at room temperature and electronic states of bismuth iron oxyfluoride thin films, Journal of Applied Physics, June 2025, American Institute of Physics,
DOI: 10.1063/5.0263144.
You can read the full text:
Contributors
The following have contributed to this page
