What is it about?
The most common RRAM's active layer process method applied to VRRAM is PVD or ALD process. However, these methods cause device degradation due to parasite leakage path and inter-cell interference. Therefore, various processing methods must be developed to minimize this phenomenon. This study presents a preliminary exploration of thermally oxidized TaOx-based memristors and their potential as artificial synapses
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Why is it important?
We conduct a preliminary investigation of Pt/TaOx/Ta RRAM devices using an oxidation method based on the annealing of the bottom electrode to confirm its potential as an artificial synapse.
Perspectives
We believe that this study paves the way for further research to optimize device conditions and pulse schemes to enhance the device’s performance and integration into neuromorphic systems.
Jung-Kyu Lee
Dongguk University
Read the Original
This page is a summary of: Preliminary investigation on the implementation of an artificial synapse using TaOx-based memristor with thermally oxidized active layer, The Journal of Chemical Physics, December 2023, American Institute of Physics,
DOI: 10.1063/5.0182699.
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