What is it about?

The degree of localization of excitons in a semiconductor is an important factor for possible device applications, particularly in alloys with high lattice mismatch such as dilute nitride III-N-V alloys. In this work, we investigate the degree and nature of exciton localization in GaNAsP nanowires. We find that it is strongly dependent on the nitrogen concentration. Additionally, we show that the addition of phosphorous further increases the degree of localization.

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Why is it important?

Our findings shed light on the nature of exciton dynamics in GaNAsP NWs, which enriches our understanding of highly mismatched semiconductor alloys and paves the way for their applications in optoelectronics.

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This page is a summary of: Exciton localization and dynamics in GaNAsP nanowires, Journal of Applied Physics, January 2024, American Institute of Physics,
DOI: 10.1063/5.0179114.
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