What is it about?
The memristors store information as variable resistance values, switching between high resistance (HRS or OFF state) and low resistance (LRS or ON state) under external voltage. In this work, the electrodes-dependent MAPbI3-based memristor was studied with a tungsten top electrode. We observed that the resistive switching and self-rectifying performance of the device were responsible for the Schottky barrier at the W/MAPbI3 interface.
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Why is it important?
The different interface of W with halide perovskite MAPbI3. Builds the unique Schottky Barrier when forward bias is in the negative bias. The Schottky barrier shows the integrated analog memristor with the Schottky Diode
Perspectives
Pave the way in developing material for high-density memristor chips with the feature of an integrated diode inside it. Build the 1D-1R integrated devices
Pham Phu-Quan
Vietnam National University University of Science
Read the Original
This page is a summary of: Self-rectifying resistive switching in MAPbI3-based memristor device, Applied Physics Letters, January 2024, American Institute of Physics,
DOI: 10.1063/5.0178032.
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