What is it about?
Power transistors (also called power amplifiers) are commonly used in radio frequency (RF) applications for enhancing the strength of wireless signals. Thus they are critical hardware in civilian and military communications systems. A power transistor requires both lower on-resistance and good heat dissipation characteristics. To this end, we have suggested a diamond-based Mott transistor with higher current density arising from a lower channel resistance due to a local metal phase in series with a p-type semiconductor phase. The local metal phase is induced by an insulator-metal transition (IMT) satisfying the Mott criterion in the p-type semiconductor. The semiconductor is hydrogen-terminated diamond (HTD) formed by coupling between hydrogen and carbon on the surface of diamond (a stable form of carbon). HTD may be considered an inhomogeneous Mott insulator with possibly topological characteristics due to exotic surface properties that require further detailed investigation.
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Why is it important?
A diamond-based Mott transistor is with higher current density arising from a lower channel resistance due to a local metal phase in series with a p-type semiconductor phase. The local metal phase is induced by an insulator-metal transition (IMT) satisfying the Mott criterion in the p-type semiconductor. The semiconductor is hydrogen-terminated diamond (HTD) formed by coupling between hydrogen and carbon on the surface of diamond (a stable form of carbon).
Perspectives
In order to advance the important field of high-power transistors, we introduce a new concept of the Mott insulator-metal transition (IMT) in a field effect transistor based on hydrogen-terminated diamond (HTD). This new insight has broad implications for significantly advancing the field of power transistors where transistor performance is presently limited by the high channel resistance that leads to generation of excessive heat.
Hyun-Tak Kim
Read the Original
This page is a summary of: Topological Mott transistor with high current density based on hydrogen-terminated diamond, Applied Physics Letters, December 2023, American Institute of Physics,
DOI: 10.1063/5.0177628.
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