What is it about?
The semiconductor materials involved in modern light-emitting diodes (LED) are often alloys which exhibit compositional disorder at the nanometer scale. We present a model of electronic transport in these alloys that accounts specifically for the microstructure of these alloys.
Featured Image
Photo by FLY:D on Unsplash
Why is it important?
Improving the efficiency of modern optoelectronic devices such as light-emitting diodes or solar cells require a deep understanding of the mechanisms of electronic transport. Our transport model do not rely on fitting parameters, but exploit the detailed microstructure of the material to extract the locations and the energy of the quantum states involved in this transport to compute their conductivity.
Perspectives
This work is the result of my PhD student, but also the outcome of a long standing collaboration between math, physics, and material sciences people.
Marcel Filoche
ESPCI ParisTech
Read the Original
This page is a summary of: Realization-dependent model of hopping transport in disordered media, Applied Physics Letters, December 2023, American Institute of Physics,
DOI: 10.1063/5.0177082.
You can read the full text:
Resources
Contributors
The following have contributed to this page
