What is it about?
This paper shows that in ε-Ga2O3 devices have the potential to achieve a large density of two-dimensional electron gas (2DEG). 2DEG is resulting from the large spontaneous polarization of ε-Ga2O3. With the advances in the gallium oxide field, tuning polarizations to alter 2DEG in the oxide heterostructure is an important step in generating flexibility in device design for electronics applications.
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Why is it important?
This paper shows that Ga2O3 based devices have the potential to built a high-electron mobility device with a large electron density. These kinds of device can be used in high power and extremely conditions.
Perspectives
The ferroelectricity and large polarization in UWB semiconductor is an unique property. It ensures that Ga2O3 have the potential to built memory and high electron mobility devices. Because of the physical property of Ga2O3, these specific devices can be used in some extremely environment. I hope this research can arise the interest of Ga2O3 based devices.
Yan Wang
Hong Kong University of Science and Technology (Guangzhou)
Read the Original
This page is a summary of: Polarization engineering of two-dimensional electron gas at ε-(AlxGa1–x)2O3/ε-Ga2O3 heterostructure, Applied Physics Letters, October 2023, American Institute of Physics,
DOI: 10.1063/5.0172161.
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