What is it about?

Investigation of the electrical properties of an AlGaAs/GaAs high electron mobility transistor with InAs self-assembled Quantum Dots (QDs) below the 2DEG channel. It reveals that Negative Differential Capacitance (NDC) occurs at 1 V bias and low temperatures, even at room temperature, when illuminated with white light. The NDC leads to increased negative differential conductance with higher frequency and optical power, although it decreases with increasing frequency. Numerical simulations confirm that the conduction band reaches its minimum at 1 V bias. The analysis of energy levels in the QD-HEMT shows the appearance of multiple capacitance peaks and their dependence on gate voltage.

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Why is it important?

Our findings are new and the results proves the application usage of the investigated Quantum Dot HEMT device. It is very sensitive to light with an increase in gate capacitance with the applied light power. It could be used at Room Temperature as well as at Low Temperatures.


We hope that people might think about this kind of interesting article. Because the results and findings are new and no one have seen this phenomena using the device structures like our work. More than anything else, and if nothing else, I hope you find this article thought-provoking.

Abdelaali Fargi
Universite de Monastir

Read the Original

This page is a summary of: Capacitance spectroscopy of InAs quantum dots inserted in an AlGaAs/GaAs HEMT for photodetector applications, AIP Advances, October 2023, American Institute of Physics,
DOI: 10.1063/5.0167563.
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