What is it about?
The research is about electrical characteristics of the thin ferroelectric layers, working as semi-transparent barriers with alternating of the polarization states. The work provides the most complete theoretical background of the ferroelectric-based tunnel junctions, it accounts the main effects which influence on the tunneling current behavior and tunnelelectroresistance (TER) due to hysteresis, electrostriction and screening effects.
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Why is it important?
These junctions are candidates for new type of the computer's memory (so called FERAM- ferroelectric random access memory) and memristors (multi-resistive devices) which are basic elements of the novel branch of electronics: neuromorphic & computational-build-in-memory AI technology, including chips and devices.
Perspectives
Tunnel junctions with composite barriers, sometimes, show anomalous I-V characteristics due to a strong reason which make application of the clear quantum tunneling model useless. And now the improved model in the paper allows to use it for the additional non-direct analysis of the experimental samples, highlighting the possible reason.
Dr. Artur Useinov
National Yang Ming Chiao Tung University
Read the Original
This page is a summary of: Influence of electrostriction and voltage-induced screening effects on the tunnel electroresistance in tunnel junctions with composite ferroelectric barriers, Journal of Applied Physics, September 2023, American Institute of Physics,
DOI: 10.1063/5.0166078.
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