What is it about?

In this work, the research group of Prof. Dr. Hao Xu has engineered the optical properties of MoS2 via alloying with Se to extend its optical absorption to the NIR region, and the phototransistor was fabricated based on monolayer MoS2(1-x)Se2x (x = ~0.1). When under 780 nm (~1.59 eV) illumination, the device delivered a photoresponsivity of 75.38 A/W, a specific detectivity of ~1e12 Jones, and an external quantum efficiency up to 11230%.

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Why is it important?

Currently, most of the reported photodetectors based on ternary TMDs have been sluggish in NIR detection, exhibiting relatively low sensitivity or external quantum efficiency (EQE). To date, the studies focused on alloyed ternary TMDs for NIR photodetection have been insufficient, especially for the intrinsically NIR-blind monolayer TMDs. Herein, we demonstrated high EQE up to 11230 % NIR photodetectors based on monolayer MoS2(1-x)Se2x grown by the facile chemical solution deposition (CSD) method.


This work has demonstrated high-performance NIR phototransistors based on ternary monolayer MoS2(1-x)Se2x, providing both a viable solution and fundamental mechanisms for NIR-blind MoS2 with extended optical absorption.

Hao Xu
University of Electronic Science and Technology of China

Read the Original

This page is a summary of: High external quantum efficiency monolayer MoS2(1−x)Se2x phototransistor with alloying-induced near-infrared absorption, Applied Physics Letters, October 2023, American Institute of Physics,
DOI: 10.1063/5.0165117.
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