What is it about?
In this work, we have used the electrochemical-etching (ECE) method to porosify the InGaN superlattice (SL), which was later used as the porous pseudo-substrate for the growth of InGaN MQWs. The results showed that porosification has great influence on the surface morphology and structure of both InGaN SL and MQWs. Using the porosified InGaN SL as the substrate can help relieve the strain of the epitixal structure, which could be attributed to the increased porosity and the newly formed small-Vpits.
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Why is it important?
We applied ECE to porosify the InGaN SL at wafer scale without any additional processing steps, such as patterning and dry etching. The strain relaxation of the InGaN SL&MQW was found to increase with the porosity, which is controllable to the etching condition. This method provides a convenient and cheap way to relieve the strain at large scale.
Perspectives
InGaN is becoming more and more important in micro-LED field, but the detrimental strain casued by the large lattice mismatch between InN and GaN hinders its applications. This paper provides and highlights a convenient and effective way to relieve the strain, and the surface morphology and structure properties of the pseudo-substrate and the MQWs have been thoroughly investigated. This paper will provide new insight for the strain relaxation of InGaN and benefit the researcher from both academia and industry.
Yihong Ji
University of Cambridge
Read the Original
This page is a summary of: Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation, Journal of Applied Physics, October 2023, American Institute of Physics,
DOI: 10.1063/5.0165066.
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