What is it about?
Distributed polarization doping (DPD) is attracting attention as a novel doping technology for III-Nitride semiconductors, particularly for obtaining p-type layers. However, factors that limit the sheet resistance of p-DPD layers are still unknown. This study revealed the point by examining hole-scattering mechanisms at various temperatures
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Why is it important?
Our findings show that hole mobility in the p-DPD AlGaN layer can be described by alloy, piezoelectric potential, acoustic phonon, and polar optical phonon scatterings. Furthermore, alloy scattering is not severe in p-DPD AlGaN, unlike in n-DPD AlGaN. Thus, DPD enables the fabrication of a lower sheet resistance p-type layer than the conventional Mg doping, whose mobility is strongly limited by ionized impurity scattering.
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This page is a summary of: Hole mobility limiting factors in dopant-free p-type distributed polarization-doped AlGaN, Applied Physics Letters, June 2023, American Institute of Physics,
DOI: 10.1063/5.0155363.
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