What is it about?
The (001) surface of two unstrained SiGe bulk single crystals with different compositions [SixGe(1−x) with x = 0.14 and 0.60] have been examined by high-resolution core-level photoemission measurements and ARPES. The heavy-hole (HH), light-hole (LH), and spin–orbit split (SO) bands were clearly resolved in the ARPES mapping.
Photo by Laura Ockel on Unsplash
Why is it important?
SiGe alloys are important semiconducting materials for a vast range of technological applications such as high-speed logic, memory and THz devices. The electronic and optical properties of materials rely on their electronic band structure. Angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation is an effective method for studying the bulk band structures of solids.
Read the Original
This page is a summary of: Three-dimensional angle-resolved photoemission study of bulk SiGe single crystals, APL Materials, April 2023, American Institute of Physics, DOI: 10.1063/5.0144426.
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