What is it about?

The (001) surface of two unstrained SiGe bulk single crystals with different compositions [SixGe(1−x) with x = 0.14 and 0.60] have been examined by high-resolution core-level photoemission measurements and ARPES. The heavy-hole (HH), light-hole (LH), and spin–orbit split (SO) bands were clearly resolved in the ARPES mapping.

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Why is it important?

SiGe alloys are important semiconducting materials for a vast range of technological applications such as high-speed logic, memory and THz devices. The electronic and optical properties of materials rely on their electronic band structure. Angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation is an effective method for studying the bulk band structures of solids.


An unstrained SiGe bulk crystal without misfit or threading dislocations can support the arbitrarily strained layer of Ge or Si without propagating dislocations and contribute to further improvement of strain-engineered Ge and Si devices. The understanding of atomic arrangement at the SiGe(001) surface under ultrahigh vacuum is important from a technological perspective for growing high-quality strained Ge and Si layers with excellent electrical properties Details of the warped valence band curves will adequately account for the electrical and optical properties of the SiGe alloys.

Dr. Kazutoshi Takahashi

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This page is a summary of: Three-dimensional angle-resolved photoemission study of bulk SiGe single crystals, APL Materials, April 2023, American Institute of Physics, DOI: 10.1063/5.0144426.
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