What is it about?

We have explored the potential of surface-activated bonding (SAB) as a means to create high-quality, low stress and low thermally resistive GaN/Si interfaces. We have also shown for the first time that SAB can directly bond a buffer-free ultrathin GaN/Si heterostructure with a tunable interlayer stress and microstructure.

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Why is it important?

Our findings light up a great reduction in thermal resistance of GaN-on-Si devices for better cooling and bring a great promise for low-cost, large-scale and multi-functional GaN/Si device applications.


Our work moves an important step forward directly integrating GaN to the present Si CMOS technology with high quality ultrathin interfaces, and will provide a perspective for controlling the residual stress and interface quality in GaN/Si or similar heterostructures and for developing novel device structures.

Yan Zhou
University of Bristol

Read the Original

This page is a summary of: Tuning the interlayer microstructure and residual stress of buffer-free direct bonding GaN/Si heterostructures, Applied Physics Letters, February 2023, American Institute of Physics,
DOI: 10.1063/5.0135138.
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