What is it about?

Impact ionization is important physics for power electronics applications. This work determined the impact ionization coefficient in beta-gallium oxide in <001> orientation from the numerical simulation. The simulation reproduced several Schottky barrier diode breakdown operations with the matched breakdown voltages. Additionally, the soft breakdown phenomena of barrier lowering is also investigated.

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Why is it important?

Impact ionization coefficient is useful to predict the device breakdown performances on numerical simulation, therefore understanding this coefficient is important to enhance the power device designs.


This article is useful for professionals in power electronics fields.

Takaya Sugiura
Keio University

Read the Original

This page is a summary of: Hard- and soft-breakdown modeling in &lt;001&gt; oriented β-Ga2O3 Schottky barrier diode, Journal of Applied Physics, November 2022, American Institute of Physics,
DOI: 10.1063/5.0125609.
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