What is it about?
Impact ionization is important physics for power electronics applications. This work determined the impact ionization coefficient in beta-gallium oxide in <001> orientation from the numerical simulation. The simulation reproduced several Schottky barrier diode breakdown operations with the matched breakdown voltages. Additionally, the soft breakdown phenomena of barrier lowering is also investigated.
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Why is it important?
Impact ionization coefficient is useful to predict the device breakdown performances on numerical simulation, therefore understanding this coefficient is important to enhance the power device designs.
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This page is a summary of: Hard- and soft-breakdown modeling in <001> oriented β-Ga2O3 Schottky barrier diode, Journal of Applied Physics, November 2022, American Institute of Physics,
DOI: 10.1063/5.0125609.
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