What is it about?

Interaction of boron with oxygen which is the main technological impurity and is available in significant concentrations in Si grown by the Czochralski method are investigated by studying boron intracenter transitions. We revealed the new state of boron-oxygen dimer-related defects in boron-doped silicon. Defects are thermally stable and form both during silicon growth and upon annealing at elevated temperatures.

Featured Image

Why is it important?

Boron-doped silicon is the most widely used material in micro- and nanoelectronics and photovoltaics. To develop of modern devices with specified parameters, it is important to thoroughly understand role of boron in the processes of defect-impurity interaction in Si both when obtaining the initial material and during operation of devices made on its base.


The revealed defects must be taken into account when developing modern devices based on boron-doped silicon, since they can play an important role in the transport of charge carriers and affect the electrical and optical parameters of devices.

Lyudmila Khirunenko
Institute of Physics, National Academy of Science of Ukraine

Read the Original

This page is a summary of: New properties of boron-oxygen dimer defect in boron-doped Czochralski silicon, Journal of Applied Physics, October 2022, American Institute of Physics,
DOI: 10.1063/5.0114809.
You can read the full text:



The following have contributed to this page