What is it about?
The article reports a study of electronic and structural properties of Tellurium free Gallium-Antimony alloys for phase change memory applications. A study of phase transformation and bonding changes of blanket thin films upon amorphous- crystalline switching ,as well as electrical analysis of PCM templates based on Ga-Sb alloys has been shown in this article.
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Why is it important?
In-situ x-ray diffraction(XRD) and transmission electron microscopy(TEM) study of Ga-Sb alloys revealed a new mechanism for programming multiple resistance states based on composition control. This will help in engineering multilayer structures that can lead to multilevel resistance states for analog memory memory applications.
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This page is a summary of: Electrical and structural properties of binary Ga–Sb phase change memory alloys, Journal of Applied Physics, July 2022, American Institute of Physics, DOI: 10.1063/5.0096022.
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