What is it about?

This article is about to investigate the properties and device performance of the heterostructures by growing ultrawide-bandgap boron nitride (BN) thin films on wide- bandgap gallium nitride (GaN), via pulsed laser deposition (PLD) technique, for its potential usefulness in electronic devices.

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Why is it important?

Wide- and ultrawide-bandgap semiconductors (GaN, boron nitride (BN), SiC, Diamond, and Ga2O3) are the heart of next-generation electronic industry due to their low power loss, higher operating voltage and temperature, and extreme environment applications as compared to conventional semiconductors such as Si, and GaAs. In addition, heterojunctions between these materials are of great significance for electronic devices as they can modify and/or further improve nanoscale device performance by utilizing the unique advantages of high breakdown electric field, increasing thermal conductivity, thereby improving the reliability of the device at extreme conditions.


Wide- and ultrawide-bandgap materials are exciting and challenging new area of research in semiconductor physics, devices, and applications. The idea behind this article was to provide a simple demonstration by fabricating Schottky diode devices based on wide- and ultrawide-bandgap materials. We observed improved breakdown capability of the diode which makes a valuable contribution in the wide-bandgap material’s domain for high power electronics. Therefore, combination of various wide- and ultrawide-bandgap semiconductors heterostructures in future could revolutionize the high power electronics.

Rice University

Read the Original

This page is a summary of: Properties and device performance of BN thin films grown on GaN by pulsed laser deposition, Applied Physics Letters, August 2022, American Institute of Physics,
DOI: 10.1063/5.0092356.
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