What is it about?
In this paper we present detailed measurements of how the density and temperature inside a plasma source vary with time when high voltage pulses are applied. Far from being static (which is the usual assumption when these types of plasma are modelled), we find that the plasma reacts strongly to the applied pulses, with both the density and temperature increasing. We suggest some possible mechanisms for this.
Photo by Marcus Cramer on Unsplash
Why is it important?
Plasma Immersion Ion Implantation (PIII) is an important technology for the semiconductor industry, and needs to be accurately modelled to ensure good process predictability and control. The standard model for the PIII process assumes a source plasma with constant density and temperature, but our work shows definitively that this is not the case.
Read the Original
This page is a summary of: Time-resolved evolution of plasma parameters in a plasma immersion ion implantation source, Physics of Plasmas, December 2021, American Institute of Physics, DOI: 10.1063/5.0063610.
You can read the full text:
Time-Resolved Ion and Electron Current Measurements in Pulsed Plasma Sheaths
This earlier paper on the same system showed that the that the ion density exhibits perturbation near the ion plasma frequency several microseconds prior to its depletion. Full reference: M.P. Bradley and C.J.T. Steenkamp, “Time-Resolved Ion and Electron Current Measurements in Pulsed Plasma Sheaths”, IEEE Trans. Plasma Sci. 34, 1156-1159 (2006).
The following have contributed to this page