What is it about?
The Gallium Nitride based HEMT transistor has two pieces of p-GaN as its component, one at Gate to make it an normally-off operation, and one at Drain to combat the Dynamic Rdson issue. The addition of the p-GaN at drain will add only small incremental increase of the DC off-state leakage. But switching measurement has shown that large hole injection transient current from the p-GaN drain on the order of several Amperes has appeared during the switching transition. The work probes into the origin of the difference between the current level at DC and during switching. It is found that the carbon doped trap plays a crucial role in the rise and decay of the large p-GaN drain hole injection transient.
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Why is it important?
The p-GaN drain injection is a critical piece ensuring the Dynamic Rdson to be under control. Knowing about its mechanism of initiation of injection and decay is very important for device design. This is especially true for switching mode other than hard switching mode which is the subject of the investigation in this paper.
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This page is a summary of: Dynamics of hole injection from p-GaN drain of a hybrid drain embedded GIT, AIP Advances, May 2021, American Institute of Physics, DOI: 10.1063/5.0049319.
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