What is it about?
This analytical method for the study of semiconductors allows describing the exchange of charge carriers between bands and defects in function of time. From measurements of conductivity, parameters such as defect densities, ionization rates, cross-sections (for example of recombination or capture by defect traps) and carrier generation rates can be obtained and in this way to perform the sample characterization.
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Why is it important?
This procedure a useful tool for verifying models of semiconductor band structures and for characterizing a material from electrical transport measurements.
Perspectives
This technique arose as a concrete need for our experimental tasks. We propose it as an answer to the unsolved problem of the inventory of charge carriers both in the conduction and valence bands and in other reservoirs (defects that act as carrier traps) as a function of time. Our goal is to develop a technique for verifying band and defect models and for accessible and auxiliary material characterization.
Carlos Figueroa
Universidad Nacional de Tucuman
Read the Original
This page is a summary of: Non-steady state transport of charge carriers. An approach based on invariant embedding method, Journal of Applied Physics, January 2020, American Institute of Physics,
DOI: 10.1063/1.5136090.
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