What is it about?

As we reach the saturation of Moore's law the search for alternatives to CMOS technology is becoming extremely necessary. In this work, we present a spin-based voltage comparator using a hybrid spin CMOS approach. The comparator model shows a voltage resolution of 50mV with a comparator mean delay of 10ns.

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Why is it important?

The work is largely divided into two parts. In the first part, we present a standard model for three-terminal spin-orbit torque devices by focusing on the interaction (reflections and transmission) between the transition metal and the ferromagnetic free layer. We also benchmark the model with two experimental results. In the later part, we discuss the use of the model in a spin-based comparator design with control transistors to shows how the model can be used to test various electrical circuit designs.


The major accomplishments of the work were to present a benchmarked model of spin-orbit torque which though already exists in the spintronics community is not well supported with exact data of the parameters used. The paper thoroughly tries to discuss the model along with presenting the parameters used in the work in the supplementary material which fall well under the experimentally recorded range. The implementation of the model to make a spin-based comparator and show how it can be used to make various electrical circuit models . In fact, the model can be extended to make neuromorphic circuits which have recently become extremely popular. The readers can also contact the authors for the Verilog codes of the models and other clarifications.

shaik wasef
King Abdullah University of Science and Technology

Read the Original

This page is a summary of: Spin—Based voltage comparator using spin-hall effect driven nanomagnets, AIP Advances, March 2020, American Institute of Physics,
DOI: 10.1063/1.5130491.
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