What is it about?
As we reach the saturation of Moore's law the search for alternatives to CMOS technology is becoming extremely necessary. In this work, we present a spin-based voltage comparator using a hybrid spin CMOS approach. The comparator model shows a voltage resolution of 50mV with a comparator mean delay of 10ns.
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Why is it important?
The work is largely divided into two parts. In the first part, we present a standard model for three-terminal spin-orbit torque devices by focusing on the interaction (reflections and transmission) between the transition metal and the ferromagnetic free layer. We also benchmark the model with two experimental results. In the later part, we discuss the use of the model in a spin-based comparator design with control transistors to shows how the model can be used to test various electrical circuit designs.
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This page is a summary of: Spin—Based voltage comparator using spin-hall effect driven nanomagnets, AIP Advances, March 2020, American Institute of Physics,
DOI: 10.1063/1.5130491.
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