Energy dependence of electron effective mass and effect of wave function confinement in a nanoscale In0.53Ga0.47As/In0.52Al0.48As quantum well

Nobuo Kotera
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4811717

Dependence of electron mass on kinetic energy in InGaAs/InAlAs quantum well

What is it about?

Through the three different experiments, electron mass is found to be the same in any directions. This is quite different from reported experiments in GaAs/AlGaAs quantum well. The constructed device design theory clarifies the relationship between the performance of opto-electronic device and the nanometer-scale device dimensions. At any temperature between 1.4 K and 300 K, the device design theory is found to be applicable.

Why is it important?

(1) Nonparabolicity of the conduction band within the nanoscale InGaAs/InAlAs quantum wells was the same with the nonparabolicity of the same bulk crystals. (2) The nonparabolicity was independent of the temperature of the crystals. (3) The experiments evidences the Kane's bulk band theory by using the quantum well structure, for the first time.

The following have contributed to this page: Professor Nobuo Kotera