Forward bias capacitance spectroscopy

What is it about?

This work addresses an important issue in the field of semiconductor characterization. Many characterization techniques require special conditions, such as variable temperature, tunable optical source, or other expensive equipment. The capacitance spectroscopies are easier to implement. The paper demonstrates room temperature capacitance measurements in characterizing semiconductor devices. The principle behind this technique has the potential to be adapted to end of line testing.

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Why is it important?

As the organic photovoltaic devices do not show the explosive development that was predicted, amorphous silicon devices are still a viable option. Therefore, the matter is still of interest. The technique presented in this work is applied to amorphous silicon based diode, however, it is not material-limited, but can be applied to any semiconductor junction diode for fast and accurate characterization.