Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors

  • R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, E. M. Vogel
  • Applied Physics Letters, October 2011, American Institute of Physics
  • DOI: 10.1063/1.3656001

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http://dx.doi.org/10.1063/1.3656001

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