Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe2Schottky diodes

A. Bobby, P.S. Gupta, B.K. Antony
  • The European Physical Journal Applied Physics, October 2012, EDP Sciences
  • DOI: 10.1051/epjap/2012120343

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http://dx.doi.org/10.1051/epjap/2012120343

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