HEXAGONAL GATE SHAPE (DIAMOND) FOR MOSFETS

What is it about?

NON-STANDARD LAYOUT STYLES, LIKE HEXAGONAL GATE GEOMETRY (DIAMOND) CAN BOOST THE FREQUENCY RESPONSE OF THE MOSFETS, WITHOUT CAUSE ANY EXTRA BURDEN FOR THE CURRENT PLANAR CMOS ICS MANUFACTURING PROCESSES. THIS INNOVATIVE LAYOUT TECNHIQUE IS STILL UNEXPLORED BY THE SEMICONDUCTOR DEVICES AND CIS.

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Why is it important?

WHEN THE GATE GEOMETRIES OF MOSFETS ARE CHANGED FROM RECTANGULAR TO NON-STANDARD ONES, NEW EFFECTS APPEAR IN THE TRANSISTOR STRUCTURE (LCE, PAMDLE AND DEPAMBBRE), THEY ARE CAPABLE OF BOOSTING THE DEVICES ELECTRICAL PERFORMANCE, WITHOUT CAUSE ANY ADDITIONAL COST TO THE CURRENT PLANAR CMOS ICS MANUFACTURING PROCESSES (LOW COST SOLUTION).