Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate

A.-L. Bavencove, P. Gilet, A. Dussaigne, Le Si Dang, B. Martin, P. Ferret, J. Eymery, C. Durand, M. Lafossas, D. Salomon, B. André, F. Levy
  • Electronics Letters, June 2011, the Institution of Engineering and Technology (the IET)
  • DOI: 10.1049/el.2011.1242

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

http://dx.doi.org/10.1049/el.2011.1242

The following have contributed to this page: Dr Joel Eymery