What is it about?
magnetoelectric switching in a Cr2O3/ferromagnet interfacial exchange-biased thin film system is a promising device for magnetic random access memory, this work introduces the role of inserted metal for this system, and also paves a way to decrease its writing energy.
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Why is it important?
understanding of exchange bias, a way to decrease its writing energy, both are important for magnetic random access memory practical applications.
Perspectives
According to the method of low writing energy, one may realize its MRAM applications.
Shujun Ye
Tohoku University
Read the Original
This page is a summary of: Inserted metals for low-energy magnetoelectric switching in a Cr2O3/ferromagnet interfacial exchange-biased thin film system, Journal of Materials Chemistry C, January 2018, Royal Society of Chemistry,
DOI: 10.1039/c7tc05375d.
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