What is it about?
We investigate the local atomic structure and the trend in the chemical bonding in ZrHx thin films produced by reactive magnetron sputtering (rDCMS) as a function of average hydrogen content (x = 0.15, 0.30, and 1.16) as well as bulk α-Zr with X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) spectroscopy using synchrotron radiation and supported with X-ray diffraction (XRD) using a lab-source.
Why is it important?
Spectroscopic measurements indicated charge-transfer from Zr to H that may affect the electrical properties as observed by a rather large change of the electronic states close to the Fermi level compared to pure Zr metal.
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This page is a summary of: Bonding Structures of ZrHx Thin Films by X-ray Spectroscopy, The Journal of Physical Chemistry C, November 2017, American Chemical Society (ACS), DOI: 10.1021/acs.jpcc.7b03223.
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