Tailoring the Electrical Properties of HfO 2 MOS-Devices by Aluminum Doping

Albena Paskaleva, Mathias Rommel, Andreas Hutzler, Dencho Spassov, Anton J. Bauer
  • ACS Applied Materials & Interfaces, August 2015, American Chemical Society (ACS)
  • DOI: 10.1021/acsami.5b03071
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The following have contributed to this page: Dr. Mathias Rommel