What is it about?

Reactive sputtering of W in Kr/TMB plasmas results in growth of W-rich 100-oriented WC1-x with a potential boron solid solution. The applied TMB flow with ~93 at.%W at 1 sccm and ~72 at.%W at 10 sccm determines the metal content for films deposited ≤600 Å degrees C

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Why is it important?

The momentum transfer is much better with a heavy inert gas like Kr compared to Ar. At higher growth temperatures than 600 degrees, the hardness decreases by a factor of 3 to 4 following the formation of WSi2 at 700–800 degrees C and Si-rich surface at 900 degrees C.


The results increase the understanding of the deependence of growth parameters and hardness properties.

Associate Prof. Martin Magnuson
Department of Physics, Chemistry and Biology (IFM)

Read the Original

This page is a summary of: Reactive magnetron sputtering of tungsten target in krypton/trimethylboron atmosphere, Thin Solid Films, June 2019, Elsevier,
DOI: 10.1016/j.tsf.2019.06.034.
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