Reactive magnetron sputtering of tungsten target in krypton/trimethylboron atmosphere
Photo by Sole D'Alessandro on Unsplash
What is it about?
Reactive sputtering of W in Kr/TMB plasmas results in growth of W-rich 100-oriented WC1-x with a potential boron solid solution. The applied TMB flow with ~93 at.%W at 1 sccm and ~72 at.%W at 10 sccm determines the metal content for films deposited ≤600 Å degrees C
Why is it important?
The momentum transfer is much better with a heavy inert gas like Kr compared to Ar. At higher growth temperatures than 600 degrees, the hardness decreases by a factor of 3 to 4 following the formation of WSi2 at 700–800 degrees C and Si-rich surface at 900 degrees C.
The following have contributed to this page: Associate Prof. Martin Magnuson