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This page is a summary of: Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiO x /HfO x and SiO x N y /HfO x double-gate dielectric stacks, Microelectronic Engineering, June 2017, Elsevier,
DOI: 10.1016/j.mee.2017.05.017.
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