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X-ray absorption and x-ray emission in combination with resonant inelastic x-ray scattering supplies the (relative) energy of the conduction band minimum and valence band maximum allowing for the seperate study of temperature-evolution of these edges in semiconductors.

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This page is a summary of: Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap, Journal of Electron Spectroscopy and Related Phenomena, December 2014, Elsevier,
DOI: 10.1016/j.elspec.2014.08.003.
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