What is it about?
In this study, hydrogenated amorphous carbon (a-C:H) films are investigated for electronic applications as an insulating layer. a-C:H films were deposited using Radio Frequency-Plasma Enhanced Chemical Vapour Deposition (RF-PECVD) technique at room temperature. For the first time, the properties of a-C:H films as a function of annealing temperature is investigated, with a focus on their electrical and optical properties. This study shows that a-C:H films are stable up to 450 °C. This investigation will facilitate the use of a-C:H films as an insulating layer where the semiconductor active layers are deposited at higher temperatures (e.g. amorphous silicon deposited around 300 °C for thin film transistor TFTs.
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Why is it important?
Various forms of diamond-like carbon are considered to have a high chemical resistance; no extensive data are available in the literature on this subject. The stability of a-C: H thin films with various reactive chemicals, commonly used in organic/printable electronic devices, is also investigated in this work. The findings may provide opportunities for adoption/integration of a-C:H in hybrid organic-inorganic electronic devices.
Perspectives
It was a great pleasure to work with the co-authors on establishing the chemical inertness of diamond-like carbon as there is no extensive information are available on this subject.
Professor Shashi Paul
De Montfort University
Read the Original
This page is a summary of: Stability of hydrogenated amorphous carbon thin films for application in electronic devices, Diamond and Related Materials, November 2018, Elsevier,
DOI: 10.1016/j.diamond.2018.10.016.
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