What is it about?
This study presents a study into the formation of oxide layers on silicon nanowires. A secondary investigation demonstrating the application of this model onto tungsten nanowires is also presented. The role of diffusion and self-limiting behaviour is established.
Photo by Chelsea on Unsplash
Why is it important?
The thermal oxidation of silicon is of tremendous importance in device fabrication. The fundamental insights presented in this work are of relevance towards nanofabrication and integrated circuits. Researchers working in this field can use this model to better understand processes and design fabrication of nanowire based devices
Read the Original
This page is a summary of: Two-dimensional modeling of the self-limiting oxidation in silicon and tungsten nanowires, Theoretical and Applied Mechanics Letters, September 2016, Elsevier, DOI: 10.1016/j.taml.2016.08.002.
You can read the full text:
Thermal Oxidation of Silicon Nanowires
Self limiting oxidation of silicon nanowires and tungsten nanowires
Theoretical and Applied Mechanics Letters Volume 6, Issue 5, September 2016, Pages 195-199
Self-limiting oxidation in silicon and tungsten nanowires
Self limiting oxidation: Researchgate
Self limiting oxidation: A model
Oxidation of SiNWs
The following have contributed to this page