What is it about?

This study presents a study into the formation of oxide layers on silicon nanowires. A secondary investigation demonstrating the application of this model onto tungsten nanowires is also presented. The role of diffusion and self-limiting behaviour is established.

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Why is it important?

The thermal oxidation of silicon is of tremendous importance in device fabrication. The fundamental insights presented in this work are of relevance towards nanofabrication and integrated circuits. Researchers working in this field can use this model to better understand processes and design fabrication of nanowire based devices


Despite a large range of studies in the field of nanowire fabrication, deeper understandings are required to fulfill the promise of NW based systems in diverse applications. In particular the fundamental understandings afforded by the presented study serve as a foundation in the design of upscaled thermal oxidation based process for nanowire based devices, including solar cells, batteries, catalysts and composites.

Dr, Dorian Hanaor
Technische Universitat Berlin

Read the Original

This page is a summary of: Two-dimensional modeling of the self-limiting oxidation in silicon and tungsten nanowires, Theoretical and Applied Mechanics Letters, September 2016, Elsevier, DOI: 10.1016/j.taml.2016.08.002.
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