Investigation of gate induced noise in E-mode GaN MOS-HEMT and its effect on noise parameters

D.K. Panda, T.R. Lenka
  • International Journal of Numerical Modelling Electronic Networks Devices and Fields, January 2018, Wiley
  • DOI: 10.1002/jnm.2318

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http://dx.doi.org/10.1002/jnm.2318

The following have contributed to this page: Dr Trupti R Lenka