All Stories

  1. Optimized THz photoconductive devices based on low-temperature grown III-V compound semiconductors incorporating distributed Bragg reflectors

    Article • IET Optoelectronics, November 2016, the Institution of Engineering and Technology (the IET)

    Ioannis Kostakis, Professor Mohamed Missous

  2. Efficient terahertz devices based on III–V semiconductor photoconductors

    Article • IET Optoelectronics, April 2014, the Institution of Engineering and Technology (the IET)

    Ioannis Kostakis, Professor Mohamed Missous

  3. Optimization and temperature dependence characteristics of low temperature In0.3Ga0.7As and In0.53Ga0.47As-In0.52Al0.48As semiconductor terahertz photoconductors

    Article • AIP Advances, September 2013, American Institute of Physics

    Ioannis Kostakis, Professor Mohamed Missous

  4. Characterization of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection

    Article • Journal of Applied Physics, May 2012, American Institute of Physics

    Ioannis Kostakis, Professor Mohamed Missous