All Stories

  1. Leakage current conduction and reliability assessment of passivating thin silicon dioxide films onn-4H-SiC

    Article • September 2016, SPIE

    Dr PIYAS SAMANTA

  2. Simulation of temperature dependent dielectric breakdown in n+-polySi/SiO2/n-6H-SiC structures during Poole-Frenkel stress at positive gate bias

    Article • Journal of Applied Physics, August 2016, American Institute of Physics

    Dr PIYAS SAMANTA

  3. Hole injection and dielectric breakdown in 6H–SiC and 4H–SiC metal–oxide–semiconductor structures during substrate electron injection via Fowler–Nordheim tunneling

    Article • Solid-State Electronics, December 2015, Elsevier

    Dr PIYAS SAMANTA

  4. Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr PIYAS SAMANTA

  5. A new degradation mechanism and its role on negative bias temperature instability in metal-oxide-semiconductor devices

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr PIYAS SAMANTA

  6. Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

    Article • Journal of Applied Physics, February 2014, American Institute of Physics

    Dr PIYAS SAMANTA

  7. Interface trap generation and recovery mechanisms during and after positive bias stress in metal-oxide-semiconductor structures

    Article • Applied Physics Letters, May 2012, American Institute of Physics

    Dr PIYAS SAMANTA

  8. Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks

    Article • Applied Physics Letters, January 2012, American Institute of Physics

    Dr PIYAS SAMANTA

  9. Comparison of electrical stress-induced charge carrier generation/trapping and related degradation of SiO2 and HfO2/SiO2 gate dielectric stacks

    Article • Microelectronics Reliability, December 2010, Elsevier

    Dr PIYAS SAMANTA

  10. Mechanism of positive charge generation in the bulk of HfAlO/SiO2 stack

    Article • Microelectronic Engineering, July 2009, Elsevier

    Dr PIYAS SAMANTA

  11. Electrical stress-induced charge carrier generation/trapping related degradation of HfAlO/SiO2 and HfO2/SiO2 gate dielectric stacks

    Article • Journal of Applied Physics, June 2009, American Institute of Physics

    Dr PIYAS SAMANTA

  12. Modeling of hole generation/trapping in ultrathin SiO{IN2} films during gate injection of electrons in direct tunneling regime

    Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr PIYAS SAMANTA

  13. Charge Trapping Related Degradation of Thin HfAlO∕SiO[sub 2] Gate Dielectric Stack during Constant-Voltage Stress

    Article • Journal of The Electrochemical Society, January 2009, The Electrochemical Society

    Dr PIYAS SAMANTA

  14. Mechanisms for generation of oxide trapped charges in ultrathin silicon dioxide films during electrical stress

    Article • Solid-State Electronics, February 2008, Elsevier

    Dr PIYAS SAMANTA

  15. Reliability analysis of thin HfO2/SiO2 gate dielectric stack

    Article • December 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr PIYAS SAMANTA

  16. On the electrical stress-induced oxide-trapped charges in thin HfO2∕SiO2 gate dielectric stack

    Article • Applied Physics Letters, September 2007, American Institute of Physics

    Dr PIYAS SAMANTA

  17. Charge carrier generation/trapping mechanisms in HfO2/SiO2 stack

    Article • Microelectronic Engineering, September 2007, Elsevier

    Dr PIYAS SAMANTA

  18. Direct tunneling stress-induced leakage current in ultrathin HfO2∕SiO2 gate dielectric stacks

    Article • Journal of Applied Physics, November 2006, American Institute of Physics

    Dr PIYAS SAMANTA

  19. Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics

    Article • Semiconductor Science and Technology, August 2006, Institute of Physics Publishing

    Dr PIYAS SAMANTA

  20. Effects of gate material on Fowler-Nordheim stress induced thin silicon dioxide degradation under negative gate bias

    Article • Journal of Applied Physics, August 2004, American Institute of Physics

    Dr PIYAS SAMANTA

  21. Computationally efficient solution of carrier trapping/annihilation equation in MOS devices using Runge–Kutta method

    Article • Solid-State Electronics, November 2003, Elsevier

    Dr PIYAS SAMANTA

  22. Gate polarity dependence of impact ionization probabilities in metal-oxide-silicon structures under Fowler–Nordheim stress

    Article • Solid-State Electronics, February 2002, Elsevier

    Dr PIYAS SAMANTA

  23. Correlation between the gate bias dependence of the probability of anode hole injection and breakdown in thin silicon dioxide films

    Article • Applied Physics Letters, December 2000, American Institute of Physics

    Dr PIYAS SAMANTA

  24. Hole trapping due to anode hole injection in thin tunnel gate oxides in memory devices under Fowler–Nordheim stress

    Article • Applied Physics Letters, November 1999, American Institute of Physics

    Dr PIYAS SAMANTA

  25. Calculation of the probability of hole injection from polysilicon gate into silicon dioxide in MOS structures under high-field stress

    Article • Solid-State Electronics, September 1999, Elsevier

    Dr PIYAS SAMANTA

  26. New positive charge trapping dynamics in SiO2 gate oxide, based on bulk impact ionization processes under Fowler–Nordheim stress

    Article • Microelectronics Reliability, December 1998, Elsevier

    Dr PIYAS SAMANTA

  27. Coupled charge trapping dynamics in thin SiO2 gate oxide under Fowler–Nordheim stress at low electron fluence

    Article • Journal of Applied Physics, March 1998, American Institute of Physics

    Dr PIYAS SAMANTA

  28. A new approach to investigate gate oxide degradation of MOS capacitors during Fowler–Nordheim stress at low electron fluence

    Article • Solid-State Electronics, January 1998, Elsevier

    Dr PIYAS SAMANTA

  29. Analysis of positive charge trapping in silicon dioxide of MOS capacitors during Fowler-Nordheim stress

    Article • Solid-State Electronics, March 1997, Elsevier

    Dr PIYAS SAMANTA

  30. Hole trapping in thin gate oxides during Fowler - Nordheim constant current stress

    Article • Semiconductor Science and Technology, February 1996, Institute of Physics Publishing

    Dr PIYAS SAMANTA

  31. Positive charge trapping in thin gate oxides of MOS capacitors during constant current and voltage fowler-nordheim stress

    Article • phys stat sol (a), October 1995, Wiley

    Dr PIYAS SAMANTA