Publication not explained
This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.
If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.
Featured Image
Read the Original
This page is a summary of: Hole injection and dielectric breakdown in 6H–SiC and 4H–SiC metal–oxide–semiconductor structures during substrate electron injection via Fowler–Nordheim tunneling, Solid-State Electronics, December 2015, Elsevier,
DOI: 10.1016/j.sse.2015.07.009.
You can read the full text:
Contributors
The following have contributed to this page