All Stories

  1. Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Christian CDM Matthus, Gian Domenico Licciardo, Dr. Luigi Di Benedetto

  2. First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC: A Proof of Concept

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Dr. Luigi Di Benedetto, Gian Domenico Licciardo

  3. Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Dr. Luigi Di Benedetto, Gian Domenico Licciardo

  4. Design of an offset-tolerant voltage sense amplifier bit-line sensing circuit for SRAM memories

    Article • Electronics Letters, August 2016, the Institution of Engineering and Technology (the IET)

    Dr. Luigi Di Benedetto, Dr Carmine Cappetta, Gian Domenico Licciardo

  5. Analytical Description of the Input Capacitance of 4H-SiC DMOSFET’s in Presence of Oxide-Semiconductor Interface Traps

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Dr. Luigi Di Benedetto, Gian Domenico Licciardo

  6. Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H−SiC p+−i−n Diodes

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    dr Roberta Nipoti, Dr. Luigi Di Benedetto, Gian Domenico Licciardo

  7. Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Dr. Luigi Di Benedetto