All Stories

  1. Electrothermal power cycling of GaN and SiC cascode devices

    Article • Microelectronics Reliability, November 2023, Elsevier

    Dr Saeed Jahdi

  2. Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses

    Article • IEEE Transactions on Power Electronics, September 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  3. Impact of Turn-Off Gate Voltage and Temperature on Threshold Voltage Instability in Pulsed Gate Voltage Stresses of SiC MOSFETs

    Article • Materials Science Forum, June 2023, Trans Tech Publications

    Dr Saeed Jahdi

  4. A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

    Article • Energies, May 2023, MDPI AG

    Dr Saeed Jahdi

  5. Electrothermal Power Cycling to Failure of Discrete Planar, Symmetrical Double-Trench & Asymmetrical Trench SiC MOSFETs

    Article • IEEE Open Journal of Power Electronics, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  6. Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

    Article • IEEE Transactions on Device and Materials Reliability, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  7. Benchmarking the robustness of Si and SiC MOSFETs: Unclamped inductive switching and short-circuit performance

    Article • Microelectronics Reliability, November 2022, Elsevier

    Dr Saeed Jahdi

  8. FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodes

    Article • Microelectronics Reliability, November 2022, Elsevier

    Dr Saeed Jahdi

  9. Unclamped inductive stressing of GaN and SiC Cascode power devices to failure at elevated temperatures

    Article • Microelectronics Reliability, November 2022, Elsevier

    Dr Saeed Jahdi

  10. Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress

    Article • October 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  11. Positive and Negative Bias Temperature Instability on Crosstalk-Stressed Symmetrical & Asymmetrical Double-Trench SiC MOSFETs

    Article • October 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  12. Unipolar and Bipolar Pulsed Gate Stresses and Threshold Voltage Shifts in GaN e-HEMTs

    Article • October 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  13. Analysis of 1st & 3rd Quadrant Electrothermal Robustness of Symmetrical and Asymmetrical Double- Trench SiC Power MOSFETs Under UIS

    Article • September 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  14. Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules

    Article • September 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  15. Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

    Article • September 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  16. On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices

    Article • September 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  17. Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

    Article • IEEE Open Journal of the Industrial Electronics Society, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  18. Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

    Article • IEEE Open Journal of the Industrial Electronics Society, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  19. A Comparison of the Short Circuit Performance of 650 V SiC Planar MOSFETs, Trench MOSFETs and Cascode JFETs

    Article • January 2022, the Institution of Engineering and Technology (the IET)

    Dr Saeed Jahdi

  20. Analysis of on-state static and dynamic transients of high voltage 4H-SIC Merged-PiN-Schottky diode

    Article • January 2022, the Institution of Engineering and Technology (the IET)

    Dr Saeed Jahdi

  21. Investigation on threshold voltage instability under sweeping and DC gate bias stressing of SiC symmetrical and asymmetrical double-trench MOSFETs

    Article • January 2022, the Institution of Engineering and Technology (the IET)

    Dr Saeed Jahdi

  22. The impact of electrothermal stress on threshold voltage drift of gan and SIC cascode devices

    Article • January 2022, the Institution of Engineering and Technology (the IET)

    Dr Saeed Jahdi

  23. Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs

    Article • November 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  24. Measurement and simulation of short circuit current sharing under parallel connection: SiC MOSFETs and SiC Cascode JFETs

    Article • Microelectronics Reliability, November 2021, Elsevier

    Dr Saeed Jahdi

  25. Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions

    Article • Energies, October 2021, MDPI AG

    Dr Saeed Jahdi

  26. Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET

    Article • October 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  27. Performance of wide-bandgap discrete and module cascodes at sub-1 kV: GaN vs. SiC

    Article • Microelectronics Reliability, October 2021, Elsevier

    Dr Saeed Jahdi

  28. Current Sharing of Parallel SiC MOSFETs under Short Circuit Conditions

    Article • September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  29. Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

    Article • IEEE Open Journal of Power Electronics, January 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  30. Prospects and Challenges of 4H-SiC Thyristors in Protection of HB-MMC-VSC-HVDC Converters

    Article • IEEE Open Journal of Power Electronics, January 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  31. Impact of Temperature and Switching Rate on Forward and Reverse Conduction of GaN and SiC Cascode devices: A Technology Evaluation

    Article • January 2021, the Institution of Engineering and Technology (the IET)

    Dr Saeed Jahdi

  32. Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents

    Article • Microelectronics Reliability, November 2020, Elsevier

    Dr Saeed Jahdi

  33. UIS performance and ruggedness of stand-alone and cascode SiC JFETs

    Article • Microelectronics Reliability, November 2020, Elsevier

    Dr Saeed Jahdi

  34. Performance of Wide-Bandgap Gallium Nitride vs Silicon Carbide Cascode Transistors

    Article • October 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  35. Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

    Article • IEEE Transactions on Industrial Electronics, September 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  36. The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation

    Article • IEEE Transactions on Industrial Electronics, June 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  37. Dynamic characterization of SiC and GaN devices with BTI stresses

    Article • Microelectronics Reliability, September 2019, Elsevier

    Dr Saeed Jahdi

  38. Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules

    Article • IEEE Transactions on Industrial Electronics, February 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  39. Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs

    Article • IEEE Transactions on Power Electronics, December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  40. Comparative analysis of false turn-ON in silicon bipolar and SiC unipolar power devices

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  41. Physics-based modelling and experimental characterisation of parasitic turn-on in IGBTs

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  42. Investigation of parasitic turn-ON in silicon IGBT and Silicon Carbide MOSFET devices: A technology evaluation

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  43. Si/SiC substrates for the implementation of linear-doped power LDMOS studied with device simulation

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Peter Gammon, Mr Chun Wa chan, Dr Saeed Jahdi

  44. Analysis of power device failure under avalanche mode Conduction

    Article • June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  45. Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs

    Article • June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  46. Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of dI $_{\bf DS}$/dt and Temperature

    Article • IEEE Transactions on Power Electronics, June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  47. An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

    Article • IEEE Transactions on Power Electronics, May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  48. Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery

    Article • IEEE Transactions on Industrial Electronics, March 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  49. The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs

    Article • IEEE Transactions on Industrial Electronics, January 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  50. Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling

    Article • September 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  51. Electrothermal modeling and characterization of SiC Schottky and silicon PiN diodes switching transients

    Article • September 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  52. An Evaluation of Silicon Carbide Unipolar Technologies for Electric Vehicle Drive-Trains

    Article • IEEE Journal of Emerging and Selected Topics in Power Electronics, September 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  53. Modeling of turn-OFF transient energy in IGBT controlled silicon PiN diodes

    Article • August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  54. Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs

    Article • IEEE Transactions on Electron Devices, July 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  55. Temperature and dIDS/dt Dependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Dr Saeed Jahdi

  56. The impact of silicon carbide technology on grid-connected Distributed Energy resources

    Article • October 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  57. Renewable Hybrids Grid-Connection Using Converter Interferences

    Article • International Journal of Sustainable Energy Development, June 2013, Infonomics Society

    Dr Saeed Jahdi

  58. DG islanding operation detection methods in combination of harmonics protection schemes

    Article • December 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  59. Grid integration of wind-solar hybrid renewables using AC/DC converters as DG power sources

    Article • November 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  60. DC-DC converters application in fuel-cell stack grid integration

    Article • October 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  61. Voltage profile stability analysis of radial distribution power systems in presence of DGs

    Article • October 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  62. DG modeling and compensation methods in distribution load flow analysis and voltage profile recovery

    Article • October 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  63. Affects of TCSC usages on Distance protection and Voltage profile of a system; a novel

    Article • October 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Saeed Jahdi

  64. Energy saving in drives using ZCT ZVT DC-DC converters, PWM inverters in variable speed compressor applications

    Article • January 2011, Elsevier

    Dr Saeed Jahdi