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  1. Hyper Dimensional Computing with Ferroelectric Tunneling Junctions

    Article • December 2023, ACM (Association for Computing Machinery)

    Suzanne Lancaster, Prof. Dr.-Ing. Thomas Mikolajick

  2. Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Films

    Article • ACS Applied Electronic Materials, March 2023, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  3. Band-to-band tunneling switches based on two-dimensional van der Waals heterojunctions

    Article • Applied Physics Reviews, March 2023, American Institute of Physics

    Phanish Chava, Prof. Dr.-Ing. Thomas Mikolajick

  4. Reliability Improvement from La 2 O 3 Interfaces in Hf 0.5 Zr 0.5 O 2 ‐Based ...

    Article • Advanced Materials Interfaces, February 2023, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  5. From Ferroelectric Material Optimization to Neuromorphic Devices

    Article • Advanced Materials, February 2023, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  6. Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N

    Article • ACS Applied Materials & Interfaces, January 2023, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  7. Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM

    Article • IEEE Journal of the Electron Devices Society, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  8. Using Raman spectroscopy and x-ray diffraction for phase determination in ferroelectric mixed Hf1−xZrxO2-based layers

    Article • Journal of Applied Physics, December 2022, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  9. Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing

    Article • ACS Applied Electronic Materials, November 2022, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  10. Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor

    Article • Nature Communications, November 2022, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  11. Influence and mitigation of interference by LID and LETID in damp heat and thermal cycling tests on PV modules

    Article • Journal of Renewable and Sustainable Energy, November 2022, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  12. Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia–Zirconia Thin Films

    Article • ACS Applied Materials & Interfaces, September 2022, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  13. Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI

    Article • IEEE Transactions on Device and Materials Reliability, September 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  14. Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO₂

    Article • IEEE Electron Device Letters, September 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  15. Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films

    Article • ACS Applied Electronic Materials, July 2022, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  16. A FeFET-Based Hybrid Memory Accessible by Content and by Address

    Article • IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, June 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  17. Reconfigurable Field Effect Transistors Design Solutions for Delay-Invariant Logic Gates

    Article • IEEE Embedded Systems Letters, June 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  18. Neuromorphic computing: current developments and future challenges

    Article • Neuromorphic Computing and Engineering, May 2022, Institute of Physics Publishing

    Prof. Dr.-Ing. Thomas Mikolajick

  19. Temperature‐Dependent Phase Transitions in Hf x Zr 1‐x O 2 Mixed Oxides: Indications of a Proper Ferroelectric Material

    Article • Advanced Electronic Materials, May 2022, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  20. Oxygen vacancy concentration as a function of cycling and polarization state in TiN/Hf0.5Zr0.5O2/TiN ferroelectric capacitors studied by x-ray photoemission electron microscopy

    Article • Applied Physics Letters, May 2022, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  21. In situ studies on atomic layer etching of aluminum oxide using sequential reactions with trimethylaluminum and hydrogen fluoride

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, May 2022, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  22. Publisher Correction: The fundamentals and applications of ferroelectric HfO2

    Article • Nature Reviews Materials, April 2022, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  23. Graph Coloring via Locally-Active Memristor Oscillatory Networks

    Article • Journal of Low Power Electronics and Applications, April 2022, MDPI AG

    Prof. Dr.-Ing. Thomas Mikolajick

  24. C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory

    Article • IEEE Transactions on Circuits and Systems I Regular Papers, April 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  25. The fundamentals and applications of ferroelectric HfO2

    Article • Nature Reviews Materials, March 2022, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  26. Atomic layer etching of ferroelectric hafnium zirconium oxide thin films enables giant tunneling electroresistance

    Article • Applied Physics Letters, March 2022, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  27. Ferroelectric-based synapses and neurons for neuromorphic computing

    Article • Neuromorphic Computing and Engineering, February 2022, Institute of Physics Publishing

    Prof. Dr.-Ing. Thomas Mikolajick

  28. From Doping to Dilution: Local Chemistry and Collective Interactions of La in HfO 2

    Article • physica status solidi (RRL) - Rapid Research Letters, February 2022, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  29. Publisher's Note: “A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films” [Appl. Phys. Lett. 120, 022901 (2022)]

    Article • Applied Physics Letters, January 2022, American Institute of Physics

    Suzanne Lancaster, Prof. Dr.-Ing. Thomas Mikolajick

  30. Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices

    Article • Materials, January 2022, MDPI AG

    Prof. Dr.-Ing. Thomas Mikolajick

  31. Achieving ferroelectric wakeup using a gradual switching approach

    Article • Applied Physics Letters, January 2022, American Institute of Physics

    Suzanne Lancaster, Prof. Dr.-Ing. Thomas Mikolajick

  32. Hole selective nickel oxide as transparent conductive oxide

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, January 2022, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  33. Many routes to ferroelectric HfO2: A review of current deposition methods

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, January 2022, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  34. 1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

    Article • IEEE Journal of the Electron Devices Society, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  35. A Germanium Nanowire Reconfigurable Transistor Model for Predictive Technology Evaluation

    Article • IEEE Transactions on Nanotechnology, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  36. Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions

    Article • IEEE Journal of the Electron Devices Society, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  37. Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors

    Article • IEEE Journal of the Electron Devices Society, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  38. Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability

    Article • IEEE Electron Device Letters, December 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  39. High electron mobility in strained GaAs nanowires

    Article • Nature Communications, November 2021, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  40. Binary ferroelectric oxides for future computing paradigms

    Article • MRS Bulletin, November 2021, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  41. Intrinsic Nature of Negative Capacitance in Multidomain Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric/Dielectric Heterostructures

    Article • Advanced Functional Materials, October 2021, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  42. Ferroelectric field-effect transistors based on HfO2: a review

    Article • Nanotechnology, September 2021, Institute of Physics Publishing

    Prof. Dr.-Ing. Thomas Mikolajick

  43. Pyroelectric dependence of atomic layer-deposited Hf0.5Zr0.5O2 on film thickness and annealing temperature

    Article • Applied Physics Letters, September 2021, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  44. Effect of the Si Doping Content in HfO2 Film on the Key Performance Metrics of Ferroelectric FETs

    Article • IEEE Transactions on Electron Devices, September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  45. An unexplored antipolar phase in HfO2 from first principles and implication for wake-up mechanism

    Article • Applied Physics Letters, August 2021, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  46. Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stacks

    Article • Semiconductor Science and Technology, August 2021, Institute of Physics Publishing

    Prof. Dr.-Ing. Thomas Mikolajick

  47. On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors

    Article • IEEE Transactions on Electron Devices, July 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  48. Bipolar conductivity in ferroelectric La:HfZrO films

    Article • Applied Physics Letters, June 2021, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  49. Domains and domain dynamics in fluorite-structured ferroelectrics

    Article • Applied Physics Reviews, June 2021, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  50. Special topic on ferroelectricity in hafnium oxide: Materials and devices

    Article • Applied Physics Letters, May 2021, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  51. Improved Vertex Coloring With NbOₓ Memristor-Based Oscillatory Networks

    Article • IEEE Transactions on Circuits and Systems I Regular Papers, May 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  52. Reconfigurable thin-film transistors based on a parallel array of Si-nanowires

    Article • Journal of Applied Physics, March 2021, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  53. Chemical Stability of IrO 2 Top Electrodes in Ferroelectric Hf 0.5 Zr 0.5 O 2 ‐Based Metal–Insulator–Metal Struc...

    Article • physica status solidi (RRL) - Rapid Research Letters, March 2021, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  54. Next generation ferroelectric materials for semiconductor process integration and their applications

    Article • Journal of Applied Physics, March 2021, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  55. Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf 0.5 Zr 0.5 O 2 Films

    Article • physica status solidi (RRL) - Rapid Research Letters, March 2021, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  56. Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing

    Article • Applied Physics Letters, February 2021, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  57. Progress and future prospects of negative capacitance electronics: A materials perspective

    Article • APL Materials, February 2021, American Institute of Physics

    Michael Hoffmann, Prof. Dr.-Ing. Thomas Mikolajick

  58. Ferroelectricity in bulk hafnia

    Article • Nature Materials, January 2021, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  59. Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

    Article • Applied Physics Letters, January 2021, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  60. Light-tunable 2D subband population in a GaN/AlGaN heterostructure

    Article • Applied Physics Letters, January 2021, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  61. Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read

    Article • Nanoscale, January 2021, Royal Society of Chemistry

    Prof. Dr.-Ing. Thomas Mikolajick

  62. Stabilizing the ferroelectric phase in HfO2-based films sputtered from ceramic targets under ambient oxygen

    Article • Nanoscale, January 2021, Royal Society of Chemistry

    Prof. Dr.-Ing. Thomas Mikolajick

  63. Polarization switching in thin doped HfO2 ferroelectric layers

    Article • Applied Physics Letters, December 2020, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  64. Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior

    Article • IEEE Transactions on Electron Devices, December 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  65. Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1−xZrxO2-based structures

    Article • Applied Physics Letters, October 2020, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  66. A Gibbs energy view of double hysteresis in ZrO2 and Si-doped HfO2

    Article • Applied Physics Letters, October 2020, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  67. What’s next for negative capacitance electronics?

    Article • Nature Electronics, September 2020, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  68. Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs

    Article • IEEE Electron Device Letters, September 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  69. Lanthanum doping induced structural changes and their implications on ferroelectric properties of Hf1−xZrxO2 thin film

    Article • Applied Physics Letters, August 2020, American Institute of Physics

    Furqan Mehmood, Prof. Dr.-Ing. Thomas Mikolajick

  70. Memory technology—a primer for material scientists

    Article • Reports on Progress in Physics, July 2020, Institute of Physics Publishing

    Prof. Dr.-Ing. Thomas Mikolajick

  71. Quantum and transport lifetimes in optically induced GaN/AlGaN 2DEGs grown on bulk GaN

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, July 2020, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  72. Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States

    Article • IEEE Electron Device Letters, July 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  73. Built-in bias fields for retention stabilization in hafnia-based ferroelectric tunnel junctions

    Article • Electronics Letters, June 2020, the Institution of Engineering and Technology (the IET)

    Prof. Dr.-Ing. Thomas Mikolajick

  74. Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

    Article • Applied Physics Letters, June 2020, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  75. Reconfigurable frequency multiplication with a ferroelectric transistor

    Article • Nature Electronics, May 2020, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  76. HfxZr1 − xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparison

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, March 2020, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  77. Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

    Article • Journal of Applied Physics, February 2020, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  78. Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-Memory

    Article • IEEE Journal of the Electron Devices Society, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  79. Inherent Charge-Sharing-Free Dynamic Logic Gates Employing Transistors With Multiple Independent Inputs

    Article • IEEE Journal of the Electron Devices Society, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  80. Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices

    Article • Journal of Materials Chemistry C, January 2020, Royal Society of Chemistry

    Prof. Dr.-Ing. Thomas Mikolajick

  81. Critical parameters for the presence of a 2DEG in GaN/AlxGa1−xN heterostructures

    Article • AIP Advances, December 2019, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  82. On the Origin of the Large Remanent Polarization in La:HfO 2

    Article • Advanced Electronic Materials, September 2019, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  83. Ferroelectric FETs With 20-nm-Thick HfO2Layer for Large Memory Window and High Performance

    Article • IEEE Transactions on Electron Devices, September 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  84. Pattern Formation With Locally Active S-Type NbOx Memristors

    Article • IEEE Transactions on Circuits and Systems I Regular Papers, July 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  85. Nanoscale resistive switching memory devices: a review

    Article • Nanotechnology, June 2019, Institute of Physics Publishing

    Prof. Dr.-Ing. Thomas Mikolajick

  86. Multi-staged deposition of trench-gate oxides for power MOSFETs

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, May 2019, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  87. Designing Efficient Circuits Based on Runtime-Reconfigurable Field-Effect Transistors

    Article • IEEE Transactions on Very Large Scale Integration (VLSI) Systems, March 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  88. Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films

    Article • Acta Materialia, March 2019, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  89. Magneto-optical confirmation of Landau level splitting in a GaN/AlGaN 2DEG grown on bulk GaN

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, March 2019, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  90. Green coloring of GaN single crystals introduced by Cr impurity

    Article • Journal of Luminescence, March 2019, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  91. Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating

    Article • IEEE Electron Device Letters, February 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  92. Deactivation of silicon surface states by Al-induced acceptor states from Al–O monolayers in SiO2

    Article • Journal of Applied Physics, January 2019, American Institute of Physics

    Dirk König, Prof. Dr.-Ing. Thomas Mikolajick

  93. Unveiling the double-well energy landscape in a ferroelectric layer

    Article • Nature, January 2019, Springer Science + Business Media

    Michael Hoffmann, Prof. Dr.-Ing. Thomas Mikolajick

  94. Direct Correlation of Ferroelectric Properties and Memory Characteristics in Ferroelectric Tunnel Junctions

    Article • IEEE Journal of the Electron Devices Society, January 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  95. European Summit on Solid-State Device and Circuit Research: Double Conference in Dresden [Conference Reports]

    Article • IEEE Solid-State Circuits Magazine, January 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  96. Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides

    Article • Advanced Electronic Materials, December 2018, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  97. Physical Approach to Ferroelectric Impedance Spectroscopy: The Rayleigh Element

    Article • Physical Review Applied, December 2018, American Physical Society (APS)

    Prof. Dr.-Ing. Thomas Mikolajick

  98. Deconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and Reliability

    Article • December 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  99. Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf>

    Article • December 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  100. SDVSRM - a new SSRM based technique featuring dynamically adjusted, scanner synchronized sample voltages for measurement of actively operated devices

    Article • Ultramicroscopy, October 2018, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  101. Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

    Article • Journal of Crystal Growth, October 2018, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  102. Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf<inf>0.5</inf>Zr<inf>0.5</inf>.O<inf>2</inf>/ A1<inf>2</inf>O<inf>3</inf>Capacitor Stacks

    Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  103. Review and perspective on ferroelectric HfO2-based thin films for memory applications

    Article • MRS Communications, August 2018, Cambridge University Press

    Prof. Dr.-Ing. Thomas Mikolajick

  104. Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1–x)O2 Ultrathin Capacitors

    Article • ACS Applied Materials & Interfaces, August 2018, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  105. Vertically Integrated Reconfigurable Nanowire Arrays

    Article • IEEE Electron Device Letters, August 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  106. Electron spin resonance in a 2D system at a GaN/AlGaN heterojunction

    Article • Applied Physics Letters, July 2018, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  107. Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors

    Article • ACS Applied Materials & Interfaces, June 2018, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  108. Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors

    Article • Applied Sciences, June 2018, MDPI AG

    Prof. Dr. Gianaurelio CUNIBERTI, Prof. Dr.-Ing. Thomas Mikolajick

  109. Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories

    Article • IEEE Transactions on Device and Materials Reliability, June 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  110. Domain Formation in Ferroelectric Negative Capacitance Devices

    Article • June 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  111. Embedding hafnium oxide based FeFETs in the memory landscape

    Article • June 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  112. Towards Full-area Passivating Contacts for Silicon Surfaces based on Al<inf>2</inf>O<inf>3</inf>-TiO<inf>x</inf> Double Layers

    Article • June 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  113. Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors

    Article • Applied Physics Letters, May 2018, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  114. On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2

    Article • Journal of Applied Physics, May 2018, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  115. Effect of Annealing Ferroelectric HfO 2 Thin Films: In Situ, High Temperature X‐Ray Diffraction

    Article • Advanced Electronic Materials, May 2018, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  116. Ferroelectric negative capacitance domain dynamics

    Article • Journal of Applied Physics, May 2018, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  117. Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology

    Article • May 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  118. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

    Article • MRS Bulletin, May 2018, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  119. Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

    Article • Journal of Applied Physics, April 2018, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  120. Interplay between ferroelectric and resistive switching in doped crystalline HfO2

    Article • Journal of Applied Physics, April 2018, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  121. Pyroelectricity of silicon-doped hafnium oxide thin films

    Article • Applied Physics Letters, April 2018, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  122. Hafnium oxide based ferroelectric devices for memories and beyond

    Article • April 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  123. Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO 2

    Article • Advanced Electronic Materials, March 2018, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  124. Normally-off operating GaN-based pseudovertical MOSFETs with MBE grown source region

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, March 2018, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  125. Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

    Article • Inorganic Chemistry, February 2018, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  126. Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents

    Article • Advanced Electronic Materials, February 2018, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  127. Signal and Noise of Schottky-Junction Parallel Silicon Nanowire Transducers for Biochemical Sensing

    Article • IEEE Sensors Journal, February 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  128. Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO 2

    Article • Advanced Materials Interfaces, January 2018, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  129. Random Number Generation Based on Ferroelectric Switching

    Article • IEEE Electron Device Letters, January 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  130. Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

    Article • Nanoscale, January 2018, Royal Society of Chemistry

    Prof. Dr.-Ing. Thomas Mikolajick

  131. Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications

    Article • IEEE Journal of the Electron Devices Society, January 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  132. Mimicking biological neurons with a nanoscale ferroelectric transistor

    Article • Nanoscale, January 2018, Royal Society of Chemistry

    Prof. Dr.-Ing. Thomas Mikolajick

  133. On the stabilization of ferroelectric negative capacitance in nanoscale devices

    Article • Nanoscale, January 2018, Royal Society of Chemistry

    Prof. Dr.-Ing. Thomas Mikolajick

  134. Reconfigurable Si Nanowire Nonvolatile Transistors

    Article • Advanced Electronic Materials, December 2017, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  135. A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

    Article • December 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  136. Reconfigurable NAND/NOR logic gates in 28 nm HKMG and 22 nm FD-SOI FeFET technology

    Article • December 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  137. Insights into antiferroelectrics from first-order reversal curves

    Article • Applied Physics Letters, October 2017, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  138. Impact of hot carrier stress on small-signal parameters of FD-SOI NMOSFETs

    Article • October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  139. Physical and circuit modeling of HfO<inf>2</inf> based ferroelectric memories and devices

    Article • October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  140. Reconfigurable NAND-NOR circuits fabricated by a CMOS printing technique

    Article • October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  141. Anti-ferroelectric ZrO<inf>2</inf>, an enabler for low power non-volatile 1T-1C and 1T random access memories

    Article • September 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  142. Human α-thrombin detection platform using aptamers on a silicon nanowire field-effect transistor

    Article • September 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  143. In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs

    Article • September 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  144. Top-Down Technology for Reconfigurable Nanowire FETs With Symmetric On-Currents

    Article • IEEE Transactions on Nanotechnology, September 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  145. A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

    Article • Journal of Computational Electronics, August 2017, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  146. Si Doped Hafnium Oxide-A “Fragile” Ferroelectric System

    Article • Advanced Electronic Materials, August 2017, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  147. The impact of charge compensated and uncompensated strontium defects on the stabilization of the ferroelectric phase in HfO2

    Article • Applied Physics Letters, August 2017, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  148. Anti-ferroelectric-like ZrO<inf>2</inf> non-volatile memory: Inducing non-volatility within state-of-the-art DRAM

    Article • August 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  149. Origin of orange color in nominally undoped HVPE GaN crystals

    Article • Optical Materials, August 2017, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  150. Effect of acceptor doping on phase transitions of HfO2 thin films for energy-related applications

    Article • Nano Energy, June 2017, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  151. Novel ferroelectric FET based synapse for neuromorphic systems

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  152. Optimizing process conditions for improved Hf1−xZrxO2 ferroelectric capacitor performance

    Article • Microelectronic Engineering, June 2017, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  153. Reconfigurable germanium transistors with low source-drain leakage for secure and energy-efficient doping-free complementary circuits

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  154. Reliability Comparison of ZrO2-Based DRAM High-k Dielectrics Under DC and AC Stress

    Article • IEEE Transactions on Device and Materials Reliability, June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  155. Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors

    Article • Reports on Progress in Physics, April 2017, Institute of Physics Publishing

    Prof. Dr.-Ing. Thomas Mikolajick

  156. Modeling and design considerations for negative capacitance field-effect transistors

    Article • April 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  157. Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics

    Article • Advanced Electronic Materials, March 2017, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  158. Control of unintentional oxygen incorporation in GaN

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, March 2017, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  159. Exploiting transistor-level reconfiguration to optimize combinational circuits

    Article • March 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  160. The RFET—a reconfigurable nanowire transistor and its application to novel electronic circuits and systems

    Article • Semiconductor Science and Technology, March 2017, Institute of Physics Publishing

    Prof. Dr.-Ing. Thomas Mikolajick

  161. Operation regimes and electrical transport of steep slope Schottky Si-FinFETs

    Article • Journal of Applied Physics, February 2017, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  162. Analog memristive and memcapacitive properties of Ti / AI<inf>2</inf>O<inf>3</inf> / Nb<inf>2</inf>O<inf>5</inf> / Ti resistive switches

    Article • February 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  163. Tuning the tunneling probability by mechanical stress in Schottky barrier based reconfigurable nanowire transistors

    Article • Solid-State Electronics, February 2017, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  164. Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

    Article • ACS Applied Materials & Interfaces, January 2017, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  165. Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions

    Article • ACS Nano, January 2017, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  166. Doping marker layers for ex situ growth characterisation of HVPE gallium nitride

    Article • CrystEngComm, January 2017, Royal Society of Chemistry

    Prof. Dr.-Ing. Thomas Mikolajick

  167. A comprehensive study on the structural evolution of HfO2thin films doped with various dopants

    Article • Journal of Materials Chemistry C, January 2017, Royal Society of Chemistry

    Prof. Dr.-Ing. Thomas Mikolajick

  168. Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

    Article • Nanoscale, January 2017, Royal Society of Chemistry

    Prof. Dr.-Ing. Thomas Mikolajick

  169. High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved Vth stability

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, January 2017, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  170. A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

    Article • December 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  171. How to make DRAM non-volatile? Anti-ferroelectrics: A new paradigm for universal memories

    Article • December 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  172. Pseudo-vertical GaN-based trench gate metal oxide semiconductor field effect transistor

    Article • November 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  173. Atomic layer deposited TiO /AlO nanolaminates as moisture barriers for organic devices

    Article • Organic Electronics, November 2016, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  174. Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

    Article • Advanced Functional Materials, October 2016, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  175. The pyroelectric coefficient of free standing GaN grown by HVPE

    Article • Applied Physics Letters, October 2016, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  176. Analysis of Vth variability in NbOx-based threshold switches

    Article • October 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  177. Bringing reconfigurable nanowire FETs to a logic circuits compatible process platform

    Article • October 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  178. High endurance strategies for hafnium oxide based ferroelectric field effect transistor

    Article • October 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  179. Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2

    Article • Advanced Functional Materials, September 2016, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  180. Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

    Article • IEEE Transactions on Electron Devices, September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  181. Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications

    Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  182. Impact of field cycling on HfO2 based non-volatile memory devices

    Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  183. Novel approach for n-type doping of HVPE gallium nitride with germanium

    Article • Journal of Crystal Growth, September 2016, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  184. Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO 2 Thin Films

    Article • Advanced Electronic Materials, July 2016, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  185. Current Progress in the Chemical Vapor Deposition of Type-Selected Horizontally Aligned Single-Walled Carbon Nanotubes

    Article • ACS Nano, July 2016, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  186. Compact Nanowire Sensors Probe Microdroplets

    Article • Nano Letters, July 2016, American Chemical Society (ACS)

    Prof. Dr. Gianaurelio CUNIBERTI, Prof. Dr.-Ing. Thomas Mikolajick

  187. High Area Capacity Lithium-Sulfur Full-cell Battery with Prelitiathed Silicon Nanowire-Carbon Anodes for Long Cycling Stability

    Article • Scientific Reports, June 2016, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  188. Trapped charge densities in Al2O3-based silicon surface passivation layers

    Article • Journal of Applied Physics, June 2016, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  189. Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN

    Article • Science and Technology of Advanced Materials, May 2016, Taylor & Francis

    Prof. Dr.-Ing. Thomas Mikolajick

  190. Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

    Article • Advanced Functional Materials, May 2016, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  191. Correlation between the macroscopic ferroelectric material properties of Si:HfO2and the statistics of 28 nm FeFET memory arrays

    Article • Ferroelectrics, May 2016, Taylor & Francis

    Prof. Dr.-Ing. Thomas Mikolajick

  192. Printable Parallel Arrays of Si Nanowire Schottky-Barrier-FETs With Tunable Polarity for Complementary Logic

    Article • IEEE Transactions on Nanotechnology, May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick, Prof. Dr. Gianaurelio CUNIBERTI

  193. Versatile resistive switching in niobium oxide

    Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  194. Root cause of degradation in novel HfO<inf>2</inf>-based ferroelectric memories

    Article • April 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  195. Capacitive Switching: An Energy-Efficient, BiFeO3-Coated Capacitive Switch with Integrated Memory and Demodulation Functions (Adv. Electron. Mater. 3/2016)

    Article • Advanced Electronic Materials, March 2016, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  196. Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, March 2016, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  197. Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes

    Article • Journal of Applied Physics, February 2016, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  198. Silicon doping of HVPE GaN bulk-crystals avoiding tensile strain generation

    Article • Journal of Physics D Applied Physics, January 2016, Institute of Physics Publishing

    Prof. Dr.-Ing. Thomas Mikolajick

  199. Analysis of threshold voltage instability in AlGaN/GaN MISHEMTs by forward gate voltage stress pulses

    Article • physica status solidi (a), January 2016, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  200. Rectifying filamentary resistive switching in ion-exfoliated LiNbO3 thin films

    Article • Applied Physics Letters, January 2016, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  201. An Energy-Efficient, BiFeO3-Coated Capacitive Switch with Integrated Memory and Demodulation Functions

    Article • Advanced Electronic Materials, January 2016, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  202. Ferroelectric Nonvolatile Memories

    Article • January 2016, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  203. Strain-engineering for improved tunneling in reconfigurable silicon nanowire transistors

    Article • January 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  204. Dielectric Nanomaterials for Silicon Solar Cells

    Article • January 2016, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  205. Conduction barrier offset engineering for DRAM capacitor scaling

    Article • Solid-State Electronics, January 2016, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  206. Al2O3-TiO2 Nanolaminates for Conductive Silicon Surface Passivation

    Article • IEEE Journal of Photovoltaics, January 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  207. Nonvolatile Field-Effect Transistors Using Ferroelectric Doped HfO2 Films

    Article • January 2016, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  208. On the Control of the Fixed Charge Densities in Al 2 O 3 -Based Silicon Surface Passivation Schemes

    Article • ACS Applied Materials & Interfaces, December 2015, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  209. Comparison of Silicon Nanowire Growth on SiO2 and on Carbon Substrates

    Article • ECS Transactions, December 2015, The Electrochemical Society

    Prof. Dr.-Ing. Thomas Mikolajick

  210. Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells

    Article • December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  211. Unfolding principle gives insight into physics behind threshold switching in a NbO memristor

    Article • November 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  212. Ferroelectric phase transitions in nanoscale HfO2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors

    Article • Nano Energy, November 2015, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  213. Impact of charge trapping on the ferroelectric switching behavior of doped HfO2

    Article • physica status solidi (a), October 2015, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  214. Low-thermal budget flash light annealing for Al2O3surface passivation

    Article • physica status solidi (RRL) - Rapid Research Letters, October 2015, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  215. Breakdown and Protection of ALD Moisture Barrier Thin Films

    Article • ACS Applied Materials & Interfaces, October 2015, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  216. Integration of niobium oxide-based resistive switching cells with different select properties into nanostructured cross-bar arrays

    Article • Semiconductor Science and Technology, October 2015, Institute of Physics Publishing

    Prof. Dr.-Ing. Thomas Mikolajick

  217. (Invited) Integration Challenges of Ferroelectric Hafnium Oxide Based Embedded Memory

    Article • ECS Transactions, October 2015, The Electrochemical Society

    Prof. Dr.-Ing. Thomas Mikolajick

  218. Investigation of the reliability degradation of scaled SONOS memory transistors

    Article • October 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  219. Stress-Dependent Performance Optimization of Reconfigurable Silicon Nanowire Transistors

    Article • IEEE Electron Device Letters, October 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  220. Detailed analysis of oxide related charges and metal-oxide barriers in terrace etched Al2O3and HfO2on AlGaN/GaN heterostructure capacitors

    Article • Journal of Applied Physics, September 2015, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  221. Investigation of band gap and permittivity of the perovskite CaTiO3in ultrathin layers

    Article • Journal of Physics D Applied Physics, September 2015, Institute of Physics Publishing

    Prof. Dr.-Ing. Thomas Mikolajick

  222. Complex Internal Bias Fields in Ferroelectric Hafnium Oxide

    Article • ACS Applied Materials & Interfaces, September 2015, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  223. Using vertical capacitance-voltage measurements for fast on-wafer characterization of epitaxial GaN-on-Si material

    Article • physica status solidi (a), September 2015, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  224. On the voltage scaling potential of SONOS non-volatile memory transistors

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  225. Influence of the substrate grade on structural and optical properties of GaN/AlGaN superlattices

    Article • Journal of Crystal Growth, September 2015, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  226. Stabilizing the ferroelectric phase in doped hafnium oxide

    Article • Journal of Applied Physics, August 2015, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  227. 2D Mapping of Chemical and Field Effect Passivation of Al2O3 on Silicon Substrates

    Article • Energy Procedia, August 2015, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  228. Energy monitoring of high dose ion implantation in semiconductors via photocurrent measurement

    Article • Microelectronics Reliability, August 2015, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  229. Via Hole Conditioning in Silicon Heterojunction metal Wrap through Solar Cells

    Article • Energy Procedia, August 2015, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  230. Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires

    Article • Nano Letters, July 2015, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick, Prof. Dr. Gianaurelio CUNIBERTI

  231. Flexible Electronics: Light Weight and Flexible High-Performance Diagnostic Platform (Adv. Healthcare Mater. 10/2015)

    Article • Advanced Healthcare Materials, July 2015, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick, Prof. Dr. Gianaurelio CUNIBERTI

  232. Polycrystalline silicon gate originated CMOS device failure investigated by Scanning Spreading Resistance Microscopy

    Article • Microelectronic Engineering, July 2015, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  233. Effect of the stoichiometry of niobium oxide on the resistive switching of Nb2O5 based metal–insulator–metal stacks

    Article • Journal of Electron Spectroscopy and Related Phenomena, July 2015, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  234. Functionality-Enhanced Logic Gate Design Enabled by Symmetrical Reconfigurable Silicon Nanowire Transistors

    Article • IEEE Transactions on Nanotechnology, July 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  235. Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications

    Article • Journal of Applied Physics, June 2015, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  236. ALD Al2O3 based nanolaminates for solar cell applications

    Article • June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  237. Mobility Investigations on Strained 30-nm High- $k$ Metal Gate MOSFETs by Geometrical Magnetoresistance Effect

    Article • IEEE Transactions on Electron Devices, June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  238. Low Temperature Compatible Hafnium Oxide Based Ferroelectrics

    Article • Ferroelectrics, May 2015, Taylor & Francis

    Prof. Dr.-Ing. Thomas Mikolajick

  239. Light Weight and Flexible High-Performance Diagnostic Platform

    Article • Advanced Healthcare Materials, May 2015, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick, Prof. Dr. Gianaurelio CUNIBERTI

  240. Stability analysis supports memristor circuit design

    Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  241. Experimental Proof of the Drain-Side Dielectric Breakdown of HKMG nMOSFETs Under Logic Circuit Operation

    Article • IEEE Electron Device Letters, May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  242. Next-generation ferroelectric memories based on FE-HfO2

    Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  243. Nonlinear Dynamics of a Locally-Active Memristor

    Article • IEEE Transactions on Circuits and Systems I Regular Papers, April 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  244. Interpretation of azimuthal angle dependence of periodic gratings in Mueller matrix spectroscopic ellipsometry

    Article • Journal of the Optical Society of America A, March 2015, Optical Society of America (OSA)

    Prof. Dr.-Ing. Thomas Mikolajick

  245. Big Data ohne Energiekollaps

    Article • Physik in unserer Zeit, March 2015, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  246. Correspondence - Dynamic leakage current compensation revisited

    Article • IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, March 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  247. Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

    Article • ECS Journal of Solid State Science and Technology, February 2015, The Electrochemical Society

    Prof. Dr.-Ing. Thomas Mikolajick

  248. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

    Article • Advanced Materials, February 2015, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  249. BiasMDP: Carrier lifetime characterization technique with applied bias voltage

    Article • Applied Physics Letters, February 2015, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  250. Thickness dependent barrier performance of permeation barriers made from atomic layer deposited alumina for organic devices

    Article • Organic Electronics, February 2015, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  251. Defect generation and activation processes in HfO2thin films: Contributions to stress-induced leakage currents

    Article • physica status solidi (a), January 2015, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  252. Microfluidic alignment and trapping of 1D nanostructures – a simple fabrication route for single-nanowire field effect transistors

    Article • RSC Advances, January 2015, Royal Society of Chemistry

    Prof. Dr.-Ing. Thomas Mikolajick, Prof. Dr. Gianaurelio CUNIBERTI

  253. Physical model of threshold switching in NbO2 based memristors

    Article • RSC Advances, January 2015, Royal Society of Chemistry

    Prof. Dr.-Ing. Thomas Mikolajick

  254. Silicon Nanowires: Fabrication and Applications

    Article • January 2015, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  255. Schottky barrier height engineering for next generation DRAM capacitors

    Article • January 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  256. Effect of independently sized gates on the delay of reconfigurable silicon nanowire transistor based circuits

    Article • January 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  257. Impact of postdeposition annealing upon film properties of atomic layer deposition-grown Al2O3 on GaN

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, January 2015, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  258. Adjusting the forming step for resistive switching in Nb2O5 by ion irradiation

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, January 2015, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  259. Stability and Performance of Heterogeneous Anode Assemblies of Silicon Nanowires on Carbon Meshes for Lithium-Sulfur Battery Applications

    Article • MRS Proceedings, January 2015, Cambridge University Press

    Prof. Dr.-Ing. Thomas Mikolajick

  260. Integration of molecular-layer-deposited aluminum alkoxide interlayers into inorganic nanolaminate barriers for encapsulation of organic electronics with improved stress resistance

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, January 2015, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  261. Reconfigurable nanowire electronics – A review

    Article • Solid-State Electronics, December 2014, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  262. About the deformation of ferroelectric hystereses

    Article • Applied Physics Reviews, December 2014, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  263. Symmetrical Al2O3-based passivation layers for p- and n-type silicon

    Article • Solar Energy Materials and Solar Cells, December 2014, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  264. Investigation of Embedded Perovskite Nanoparticles for Enhanced Capacitor Permittivities

    Article • ACS Applied Materials & Interfaces, November 2014, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  265. Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide

    Article • ACS Applied Materials & Interfaces, November 2014, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  266. Bipolar Electric-Field Enhanced Trapping and Detrapping of Mobile Donors in BiFeO 3 Memristors

    Article • ACS Applied Materials & Interfaces, November 2014, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  267. Optoelectronic switching of nanowire-based hybrid organic/oxide/semiconductor field-effect transistors

    Article • Nano Research, November 2014, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick, Prof. Dr. Gianaurelio CUNIBERTI

  268. Reconfigurable Nanowire Electronics-Enabling a Single CMOS Circuit Technology

    Article • IEEE Transactions on Nanotechnology, November 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  269. Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors

    Article • IEEE Transactions on Electron Devices, November 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  270. Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

    Article • Advanced Materials, October 2014, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  271. Local Ion Irradiation-Induced Resistive Threshold and Memory Switching in Nb 2 O 5 /NbO x Films

    Article • ACS Applied Materials & Interfaces, October 2014, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  272. Photomask CD and LER characterization using Mueller matrix spectroscopic ellipsometry

    Article • October 2014, SPIE

    Prof. Dr.-Ing. Thomas Mikolajick

  273. Ferroelectric Hafnium Oxide A Game Changer to FRAM?

    Article • October 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  274. Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors

    Article • Advances in Science and Technology, October 2014, Trans Tech Publications

    Prof. Dr.-Ing. Thomas Mikolajick

  275. OLED compatible water-based nanolaminate encapsulation systems using ozone based starting layer

    Article • Organic Electronics, October 2014, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  276. Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors

    Article • October 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  277. Analog resistive switching behavior of Al/Nb2O5/Al device

    Article • Semiconductor Science and Technology, September 2014, Institute of Physics Publishing

    Prof. Dr.-Ing. Thomas Mikolajick

  278. Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage

    Article • Microelectronics Reliability, September 2014, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  279. (Invited) Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

    Article • ECS Transactions, August 2014, The Electrochemical Society

    Prof. Dr.-Ing. Thomas Mikolajick

  280. Temperature dependent switching behaviour of nickel silicided undoped silicon nanowire devices

    Article • physica status solidi c, August 2014, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  281. Composition profiles across MIMs for resistive switching studied by EDS and EELS

    Article • Acta Crystallographica Section A Foundations and Advances, August 2014, International Union of Crystallography

    Prof. Dr.-Ing. Thomas Mikolajick

  282. Near surface inversion layer recombination in Al2O3 passivated n-type silicon

    Article • Journal of Applied Physics, July 2014, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  283. Resistive switching in unstructured, polycrystalline BiFeO3 thin films with downscaled electrodes

    Article • physica status solidi (a), July 2014, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  284. Impact of different dopants on the switching properties of ferroelectric hafniumoxide

    Article • Japanese Journal of Applied Physics, July 2014, Japan Society of Applied Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  285. Unfolding the local activity of a memristor

    Article • July 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  286. Dynamic off-state TDDB of ultra short channel HKMG nFETS and its implications on CMOS logic reliability

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  287. Localization of temperature sensitive areas on analog circuits

    Article • Microelectronics Journal, June 2014, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  288. Scanning Spreading Resistance Microscopy analysis of locally blocked implant sites

    Article • Microelectronic Engineering, June 2014, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  289. Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  290. Atomic layer deposited high-κ nanolaminates for silicon surface passivation

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, May 2014, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  291. The Degradation Process of High- $k~{\rm SiO}_{2}/{\rm HfO}_{2}$ Gate-Stacks: A Combined Experimental and First Principles Investigation

    Article • IEEE Transactions on Electron Devices, May 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  292. Conduction Mechanisms and Breakdown Characteristics of $\hbox{Al}_{2}\hbox{O}_{3}$-Doped $\hbox{ZrO}_{2}$ High-

    Article • IEEE Transactions on Device and Materials Reliability, March 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  293. Influence of substrate quality on structural properties of AlGaN/GaN superlattices grown by molecular beam epitaxy

    Article • Journal of Applied Physics, February 2014, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  294. Exploiting Memristive BiFeO3Bilayer Structures for Compact Sequential Logics

    Article • Advanced Functional Materials, February 2014, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  295. Ionic effects on the transport characteristics of nanowire-based FETs in a liquid environment

    Article • Nano Research, January 2014, Tsinghua University Press

    Prof. Dr.-Ing. Thomas Mikolajick, Prof. Dr. Gianaurelio CUNIBERTI

  296. Schottky barrier-based silicon nanowire pH sensor with live sensitivity control

    Article • Nano Research, January 2014, Tsinghua University Press

    Prof. Dr.-Ing. Thomas Mikolajick, Prof. Dr. Gianaurelio CUNIBERTI

  297. Elementary Aspects for Circuit Implementation of Reconfigurable Nanowire Transistors

    Article • IEEE Electron Device Letters, January 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  298. Unfolding the Threshold Switching Behavior of a Memristor

    Article • January 2014, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  299. Reconfigurable silicon nanowire devices and circuits: Opportunities and challenges

    Article • January 2014, EDAA

    Prof. Dr.-Ing. Thomas Mikolajick

  300. Material Prospects of Reconfigurable Transistor (RFETs) – From Silicon to Germanium Nanowires

    Article • MRS Proceedings, January 2014, Cambridge University Press

    Prof. Dr.-Ing. Thomas Mikolajick

  301. Silicon heterojunction metal wrap through solar cells – a 3D TCAD simulation study

    Article • EPJ Web of Conferences, January 2014, EDP Sciences

    Prof. Dr.-Ing. Thomas Mikolajick

  302. Silicon heterojunction metal wrap through solar cells – a 3D TCAD simulation study

    Article • EPJ Web of Conferences, January 2014, EDP Sciences

    Prof. Dr.-Ing. Thomas Mikolajick

  303. Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, January 2014, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  304. Forming-Free Resistive Switching in Multiferroic BiFeO 3 thin Films with Enhanced Nanoscale Shunts

    Article • ACS Applied Materials & Interfaces, December 2013, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  305. Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations

    Article • Applied Physics Letters, December 2013, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  306. From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

    Article • IEEE Transactions on Electron Devices, December 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  307. Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

    Article • December 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  308. Channel length dependent sensor response of Schottky-barrier FET pH sensors

    Article • November 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick, Gianaurelio Cuniberti

  309. Publisher's Note: “Sponge-like Si-SiO2 nanocomposite—Morphology studies of spinodally decomposed silicon-rich oxide” [Appl. Phys. Lett. 103, 131911 (2013)]

    Article • Applied Physics Letters, October 2013, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  310. Application of Mueller matrix spectroscopic ellipsometry to determine line edge roughness on photomasks

    Article • October 2013, SPIE

    Prof. Dr.-Ing. Thomas Mikolajick

  311. Non-volatile data storage in HfO2-based ferroelectric FETs

    Article • October 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  312. Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

    Article • Solid-State Electronics, October 2013, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  313. Sponge-like Si-SiO2 nanocomposite—Morphology studies of spinodally decomposed silicon-rich oxide

    Article • Applied Physics Letters, September 2013, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  314. Dually Active Silicon Nanowire Transistors and Circuits with Equal Electron and Hole Transport

    Article • Nano Letters, September 2013, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  315. Sensitivity analysis for OMOG and EUV photomasks characterized by UV-NIR spectroscopic ellipsometry

    Article • September 2013, SPIE

    Prof. Dr.-Ing. Thomas Mikolajick

  316. Characterization of multilayer gate stacks by multi-phonon transient trap spectroscopy

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  317. Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectrics

    Article • Microelectronic Engineering, September 2013, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  318. Reconfigurable nanowire electronics — Device principles and circuit prospects

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  319. New color sensor concept based on single spectral tunable photodiode

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  320. HEMT test structure technology for fast on-wafer characterization of epitaxial GaN-on-Si material

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  321. Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  322. Silicon nanowires - a versatile technology platform

    Article • physica status solidi (RRL) - Rapid Research Letters, July 2013, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  323. Key concepts behind forming-free resistive switching incorporated with rectifying transport properties

    Article • Scientific Reports, July 2013, Nature

    Prof. Dr.-Ing. Thomas Mikolajick

  324. Energy efficiency enhancements for semiconductors, communications, sensors and software achieved in cool silicon cluster project

    Article • The European Physical Journal Applied Physics, July 2013, EDP Sciences

    Prof. Dr.-Ing. Thomas Mikolajick

  325. Influence of Frequency Dependent Time to Breakdown on High-K/Metal Gate Reliability

    Article • IEEE Transactions on Electron Devices, July 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  326. Performance investigation and optimization of Si:HfO2 FeFETs on a 28 nm bulk technology

    Article • July 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  327. Structural and dielectric properties of sputtered SrxZr(1−x)Oy

    Article • Journal of Applied Physics, June 2013, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  328. Mesoscopic analysis of leakage current suppression in ZrO2/Al2O3/ZrO2 nano-laminates

    Article • Journal of Applied Physics, May 2013, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  329. Parallel arrays of Schottky barrier nanowire field effect transistors: Nanoscopic effects for macroscopic current output

    Article • Nano Research, May 2013, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  330. Room temperature fabricated NbOx/Nb2O5 memory switching device with threshold switching effect

    Article • May 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Professor David Rafaja, Prof. Dr.-Ing. Thomas Mikolajick

  331. Inline-Characterization and Step Coverage Optimization of Deposited Dielectrics in DRAM Structures

    Article • IEEE Transactions on Semiconductor Manufacturing, May 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  332. Nanosession: Ferroelectrics - New and Unusal Material Systems

    Article • April 2013, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  333. Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

    Article • Thin Solid Films, April 2013, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  334. (Invited) Hafnium Oxide Based CMOS Compatible Ferroelectric Materials

    Article • ECS Transactions, March 2013, The Electrochemical Society

    Prof. Dr.-Ing. Thomas Mikolajick

  335. Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

    Article • IEEE Transactions on Device and Materials Reliability, March 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  336. Hafnium Oxide Based CMOS Compatible Ferroelectric Materials

    Article • ECS Journal of Solid State Science and Technology, January 2013, The Electrochemical Society

    Prof. Dr.-Ing. Thomas Mikolajick

  337. Local Doping Profiles for Height-Selective Emitters Determined by Scanning Spreading Resistance Microscopy (SSRM)

    Article • IEEE Journal of Photovoltaics, January 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  338. Atomic layer deposition of anatase TiO2 on porous electrodes for dye-sensitized solar cells

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, January 2013, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  339. Molecular beam deposited zirconium dioxide as a high-κ dielectric for future GaN based power devices

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, January 2013, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  340. Reliability of $\hbox{SrRuO}_{3}\hbox{/SrTiO}_{3}\hbox{/SrRuO}_{3}$ Stacks for DRAM Applications

    Article • IEEE Electron Device Letters, December 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  341. Silicon and Germanium Nanoclusters Embedded in Zirconium Dioxide Matrices

    Article • ECS Journal of Solid State Science and Technology, October 2012, The Electrochemical Society

    Prof. Dr.-Ing. Thomas Mikolajick

  342. Ferroelectricity in Gd-Doped HfO2 Thin Films

    Article • ECS Journal of Solid State Science and Technology, October 2012, The Electrochemical Society

    Prof. Dr.-Ing. Thomas Mikolajick

  343. OFF-state induced threshold voltage relaxation after PBTI stress

    Article • October 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  344. Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

    Article • IEEE Electron Device Letters, September 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  345. Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties

    Article • Applied Physics Letters, August 2012, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  346. Ferroelectricity in Simple Binary ZrO2and HfO2

    Article • Nano Letters, August 2012, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  347. An investigation of the electrical properties of the interface between pyrolytic carbon and silicon for Schottky diode applications

    Article • Journal of Applied Physics, June 2012, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  348. Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films

    Article • Solid-State Electronics, June 2012, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  349. Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG

    Article • June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  350. HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention

    Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  351. Thermally activated crystallization of Nb2O5 grown on Pt electrode

    Article • Applied Physics A, April 2012, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  352. Low-cost caesium phosphate as n-dopant for organic light-emitting diodes

    Article • Journal of Applied Physics, April 2012, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  353. Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation

    Article • April 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  354. Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

    Article • Advanced Functional Materials, March 2012, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  355. Substrate effect on the resistive switching in BiFeO3 thin films

    Article • Journal of Applied Physics, February 2012, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  356. Metal oxide memories based on thermochemical and valence change mechanisms

    Article • MRS Bulletin, February 2012, Cambridge University Press

    Prof. Dr.-Ing. Thomas Mikolajick

  357. Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

    Article • IEEE Electron Device Letters, February 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  358. Reconfigurable Silicon Nanowire Transistors

    Article • Nano Letters, January 2012, American Chemical Society (ACS)

    Prof. Dr.-Ing. Thomas Mikolajick

  359. Ferroelectricity in yttrium-doped hafnium oxide

    Article • Journal of Applied Physics, December 2011, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  360. Reduction of leakage currents with nanocrystals embedded in an amorphous matrix in metal-insulator-metal capacitor stacks

    Article • Applied Physics Letters, November 2011, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  361. Direct Probing of Schottky Barriers in Si Nanowire Schottky Barrier Field Effect Transistors

    Article • Physical Review Letters, November 2011, American Physical Society (APS)

    Prof. Dr.-Ing. Thomas Mikolajick

  362. Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation

    Article • Solid-State Electronics, November 2011, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  363. Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

    Article • Applied Physics Letters, September 2011, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  364. Phase transitions in ferroelectric silicon doped hafnium oxide

    Article • Applied Physics Letters, September 2011, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  365. Control of Rectifying and Resistive Switching Behavior in BiFeO$_{3}$ Thin Films

    Article • Applied Physics Express, August 2011, Institute of Physics Publishing

    Prof. Dr.-Ing. Thomas Mikolajick

  366. Multiscale modeling of nanowire-based Schottky-barrier field-effect transistors for sensor applications

    Article • Nanotechnology, July 2011, Institute of Physics Publishing

    Prof. Dr.-Ing. Thomas Mikolajick

  367. Phase stabilization of sputtered strontium zirconate

    Article • Microelectronic Engineering, July 2011, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  368. The influence of crystallinity on the resistive switching behavior of TiO2

    Article • Microelectronic Engineering, July 2011, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  369. Reduced leakage current in BiFeO3 thin films with rectifying contacts

    Article • Applied Physics Letters, June 2011, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  370. Optical characterization of three-dimensional structures within a DRAM capacitor

    Article • May 2011, SPIE

    Prof. Dr.-Ing. Thomas Mikolajick

  371. Influence of composition and bottom electrode properties on the local conductivity of TiN/HfTiO2 and TiN/Ru/HfTiO2 stacks

    Article • Applied Physics Letters, January 2011, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  372. Polarity Behavior and Adjustment in Silicon Nanowire Schottky Junction Transistors

    Article • January 2011, The Electrochemical Society

    Prof. Dr.-Ing. Thomas Mikolajick

  373. Applicability of molecular beam deposition for the growth of high-k oxides

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, January 2011, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  374. Evaluation of the electrical and physical properties of thin calcium titanate high-k insulators for capacitor applications

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, January 2011, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  375. Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, January 2011, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  376. Macroscopic and microscopic electrical characterizations of high-k ZrO2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structures

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, January 2011, American Vacuum Society

    Prof. Dr.-Ing. Thomas Mikolajick

  377. Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors

    Article • Journal of Applied Physics, December 2010, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  378. An investigation of the electrical properties of metal-insulator-silicon capacitors with pyrolytic carbon electrodes

    Article • Journal of Applied Physics, November 2010, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  379. An empirical model describing the MLC retention of charge trap flash memories

    Article • October 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  380. Carbon junction implant: Effect on leakage currents and defect distribution

    Article • September 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  381. Flash-Type Memories

    Article • July 2010, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  382. Improved high-temperature etch processing of high-k metal gate stacks in scaled TANOS memory devices

    Article • Microelectronic Engineering, May 2010, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  383. The influence of bottom oxide thickness on the extraction of the trap energy distribution in SONOS (silicon-oxide-nitride-oxide-silicon) structures

    Article • Applied Physics A, April 2010, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  384. (Invited) Nanocrystalline Materials: Optimization of Thin Film Properties

    Article • January 2010, The Electrochemical Society

    Prof. Dr.-Ing. Thomas Mikolajick

  385. Characterisation of retention properties of charge-trapping memory cells at low temperatures

    Article • IOP Conference Series Materials Science and Engineering, September 2009, Institute of Physics Publishing

    Prof. Dr.-Ing. Thomas Mikolajick

  386. Select Device Disturb Phenomenon in TANOS NAND Flash Memories

    Article • IEEE Electron Device Letters, May 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  387. Nonvolatile Memory Concepts Based on Resistive Switching in Inorganic Materials

    Article • Advanced Engineering Materials, April 2009, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  388. TaN metal gate damage during high-k (Al2O3) high-temperature etch

    Article • Microelectronic Engineering, April 2009, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  389. Experimental study of domain wall motion in long nanostrips under the influence of a transverse field

    Article • Applied Physics Letters, October 2008, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  390. Charge cross talk in sub-lithographically shrinked 32nm Twin Flash™ memory cells

    Article • Solid-State Electronics, April 2008, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  391. Accurate program simulation of TANOS charge trapping devices

    Article • January 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  392. The Future of Charge Trapping Memories

    Article • January 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  393. Localized Charge Trapping Memory Cells in a 63 nm Generation with Nanoscale Epitaxial Cobalt Salicide Buried Bitlines

    Article • MRS Proceedings, January 2007, Cambridge University Press

    Prof. Dr.-Ing. Thomas Mikolajick

  394. A New Twin Flash Cell for 2 and 4 Bit Operation at 63nm Feature Size

    Article • January 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  395. Monte Carlo Simulation of Charge Carrier Injection in Twin Flash Memory Devices during Program and Erase

    Article • September 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  396. 1/f Noise Analysis of a 75 nm Twin-Flash Technology Non-Volatile Memory Cell

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  397. Future trends in charge trapping memories

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  398. Influence of the morphology of ferroelectric SrBi2Ta2O9 thin films deposited by metal organic decomposition on its electrical characteristics

    Article • Applied Surface Science, August 2005, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  399. Integration of stacked capacitor module with ultra-thin ferroelectric SrBi2Ta2O9 film for high density ferroelectric random access memory applications at low voltage operation

    Article • Thin Solid Films, February 2005, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  400. Materials for Information Technology

    Article • January 2005

    Prof. Dr.-Ing. Thomas Mikolajick

  401. Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept

    Article • Journal of Computational Electronics, October 2004, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  402. Material Aspects in Emerging Nonvolatile Memories

    Article • Journal of The Electrochemical Society, January 2004, The Electrochemical Society

    Prof. Dr.-Ing. Thomas Mikolajick

  403. Modeling and simulation of electron injection during programming in Twin Flash/spl trade/ devices based on energy transport and the non-local lucky electron concept

    Article • January 2004, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  404. 110nm NROM technology for code and data flash products

    Article • January 2004, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  405. SrBi 2 Ta 2 O 9 ferroelectric thin film capacitors: degradation in a hydrogen ambient

    Article • Applied Physics A, August 2003, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  406. H+, Na+, and K+ ion sensing properties of sodium and aluminum coimplanted LPCVD silicon oxynitride thin films

    Article • Applied Surface Science, February 2003, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  407. Alkali- and hydrogen ion sensing properties of LPCVD silicon oxynitride thin films

    Article • Thin Solid Films, February 2003, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  408. Kinetic of phase transformation of SrBi2Ta2O9 deposited by metalorganic decomposition on platinum electrodes

    Article • Applied Physics Letters, December 2002, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  409. Platinum contamination issues in ferroelectric memories

    Article • Journal of Applied Physics, September 2002, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  410. Effect of barium contamination on gate oxide integrity in high-k dram

    Article • Journal of Non-Crystalline Solids, May 2002, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  411. Oxygen tracer diffusion in IrO2 barrier films

    Article • Journal of Applied Physics, February 2002, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  412. Ferroelectric Nonvolatile Memories

    Article • January 2002, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  413. Integration of FeRAM Devices into a Standard CMOS Process-Impact of Ferroelectric Anneals on CMOS Characteristics

    Article • Integrated Ferroelectrics, January 2002, Taylor & Francis

    Prof. Dr.-Ing. Thomas Mikolajick

  414. Integration of FeRAM Devices into a Standard CMOS Process-Impact of Ferroelectric Anneals on CMOS Characteristics

    Article • Integrated Ferroelectrics, January 2002, Taylor & Francis

    Prof. Dr.-Ing. Thomas Mikolajick

  415. Influence of deposition conditions on Ir/IrO[sub 2] oxygen barrier effectiveness

    Article • Journal of Applied Physics, January 2002, American Institute of Physics

    Prof. Dr.-Ing. Thomas Mikolajick

  416. FeRAM technology for high density applications

    Article • Microelectronics Reliability, July 2001, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  417. Impact of platinum contamination on ferroelectric memories

    Article • Integrated Ferroelectrics, January 2001, Taylor & Francis

    Prof. Dr.-Ing. Thomas Mikolajick

  418. Barium, Strontium and Bismuth Contamination in CMOS Processes

    Article • Solid State Phenomena, January 2001, Trans Tech Publications

    Prof. Dr.-Ing. Thomas Mikolajick

  419. Thickness dependent morphology and electrical characteristics of SrBi2Ta2O9 deposited by metal organic decomposition

    Article • Integrated Ferroelectrics, January 2001, Taylor & Francis

    Prof. Dr.-Ing. Thomas Mikolajick

  420. Integration of H2 barriers for ferroelectric memories based on SrBi2Ta2O9 (SBT)

    Article • Integrated Ferroelectrics, November 2000, Taylor & Francis

    Prof. Dr.-Ing. Thomas Mikolajick

  421. Low temperature process and thin SBT films for ferroelectric memory devices

    Article • Integrated Ferroelectrics, October 2000, Taylor & Francis

    Prof. Dr.-Ing. Thomas Mikolajick

  422. Aspects of Barium Contamination in High Dielectric Dynamic Random Access Memories

    Article • Journal of The Electrochemical Society, January 2000, The Electrochemical Society

    Prof. Dr.-Ing. Thomas Mikolajick

  423. An Overview of FeRAM Technology for High Density Applications

    Article • MRS Proceedings, January 2000, Cambridge University Press

    Prof. Dr.-Ing. Thomas Mikolajick

  424. The influence of surface oxidation on the pH-sensing properties of silicon nitride

    Article • Sensors and Actuators B Chemical, September 1999, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  425. The pH-sensing properties of tantalum pentoxide films fabricated by metal organic low pressure chemical vapor deposition

    Article • Sensors and Actuators B Chemical, October 1997, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  426. The effect of random dopant fluctuations on the minimum channel length of short-channel MOS transistors

    Article • Applied Physics A, June 1997, Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  427. Field-Effect transistors as transducers in biosensors for substrates of dehydrogenases

    Article • Electroanalysis, November 1994, Wiley

    Prof. Dr.-Ing. Thomas Mikolajick

  428. Influence of statistical dopant fluctuations on MOS transistors with deep submicron channel lengths

    Article • Microelectronic Engineering, April 1993, Elsevier

    Prof. Dr.-Ing. Thomas Mikolajick

  429. An Introduction to Nonvolatile Memory Technology

    Article • Springer Science + Business Media

    Prof. Dr.-Ing. Thomas Mikolajick

  430. An overview of twin-flash technology

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  431. Highly scalable 90nm STI bounded twin flash cell with local interconnect

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  432. Programming Transients of Trapping Nitride Storage Flash Memory Cells and Evidence of Lateral Charge Redistributions during or after Programming

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick

  433. Stack capacitor integration with buried oxygen barrier using chemical mechanical polishing of noble metals

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr.-Ing. Thomas Mikolajick