All Stories

  1. Re-Investigation of SiC/SiO2 Interface Passivation by Nitrogen Annealing
  2. Effect of Annealing on the Characteristics of Ti/Al Ohmic Contacts to p-Type 4H-SiC
  3. Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment