All Stories

  1. Mechanisms and Characteristics of Large-Area High-Current-Density 4H-SiC Trench Junction Barrier Schottky Diodes
  2. Simulation of Electrothermal Characteristics of 1200V/75A 4H-SiC JBS
  3. Study of Temperature-Dependent Mechanisms and Characteristics of 4H-SiC Junction Barrier Schottky Rectifiers
  4. Re-Investigation of SiC/SiO2 Interface Passivation by Nitrogen Annealing