All Stories

  1. Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy

    Article • Applied Physics Letters, July 2019, American Institute of Physics

    Yuewei Zhang

  2. Anisotropic etching of β-Ga2O3 using hot phosphoric acid

    Article • Applied Physics Letters, July 2019, American Institute of Physics

    Yuewei Zhang

  3. Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic β-(AlxGa1–x)2O3 (x ≤ 0.21) films

    Article • Applied Physics Letters, June 2019, American Institute of Physics

    Yuewei Zhang

  4. MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

    Article • APL Materials, February 2019, American Institute of Physics

    Dr Fikadu Alema, Yuewei Zhang

  5. Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film

    Article • APL Materials, February 2019, American Institute of Physics

    Dr Fikadu Alema, Yuewei Zhang