All Stories

  1. Controllable nitrogen doping of MOCVD Ga2O3 using NH3

    Article • Applied Physics Letters, June 2023, American Institute of Physics

    Dr Fikadu Alema

  2. Ge doping of β-Ga2O3 by MOCVD

    Article • APL Materials, September 2021, American Institute of Physics

    Dr Fikadu Alema

  3. MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

    Article • Applied Physics Letters, December 2020, American Institute of Physics

    Dr Fikadu Alema

  4. H2O vapor assisted growth of β-Ga2O3by MOCVD

    Article • AIP Advances, August 2020, American Institute of Physics

    Dr Fikadu Alema

  5. Low 1014  cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD

    Article • APL Materials, February 2020, American Institute of Physics

    Dr Fikadu Alema

  6. Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3

    Article • APL Materials, December 2019, American Institute of Physics

    Dr Fikadu Alema

  7. MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

    Article • APL Materials, February 2019, American Institute of Physics

    Dr Fikadu Alema, Yuewei Zhang

  8. Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film

    Article • APL Materials, February 2019, American Institute of Physics

    Dr Fikadu Alema, Yuewei Zhang

  9. 10.1016/j.jcrysgro.2015.11.012

    Article • February 2016, SPIE

    Dr Fikadu Alema

  10. Growth of high Mg content wurtzite MgZnO epitaxial films via pulsed metal organic chemical vapor deposition

    Article • Journal of Crystal Growth, February 2016, Elsevier

    Dr Fikadu Alema

  11. Temperature and pulse duration effects on the growth of MgZnO via pulsed metal organic chemical vapor deposition

    Article • Japanese Journal of Applied Physics, January 2016, Japan Society of Applied Physics

    Dr Fikadu Alema

  12. Pulsed-Metal Organic Chemical Vapor Deposition (PMOCVD) for Growth of Single Phase Wurtzite MgxZn1-xO Epitaxial Film with High Mg Content (x=0.51)

    Article • MRS Advances, January 2016, Cambridge University Press

    Dr Fikadu Alema

  13. Dielectric properties of BaMg1∕3Nb2∕3O 3 doped Ba 0.45 Sr 0.55 Tio 3 thin films for tunable microwave applications

    Article • Journal of Advanced Dielectrics, December 2015, World Scientific Pub Co Pte Lt

    Dr Fikadu Alema

  14. Magnetic Exchange in Mn II [TCNE] (TCNE = Tetracyanoethylene) Molecule-Based Magnets with Two- and Three-Dimensional Magnetic Networks

    Article • The Journal of Physical Chemistry C, November 2015, American Chemical Society (ACS)

    Dr Fikadu Alema

  15. Stoichiometry and phase purity control of radio frequency magnetron sputter deposited Ba0.45Sr0.55TiO3 thin films for tunable devices

    Article • Journal of Applied Physics, November 2013, American Institute of Physics

    Dr Fikadu Alema

  16. Effect of concurrent Mg/Nb-doping on dielectric properties of Ba0.45Sr0.55TiO3 thin films

    Article • Journal of Applied Physics, August 2013, American Institute of Physics

    Dr Fikadu Alema

  17. Magnetic transitions and spin-glass reentrance in two-dimensional [Mn II (TCNE)(NCMe) 2 ]X (X = PF 6 ,AsF 6 ,SbF 6 ) molecular magnets

    Article • Journal of Physics Condensed Matter, June 2013, Institute of Physics Publishing

    Dr Fikadu Alema