All Stories

  1. Dual-Channel Trench-Gate (DCTG) Tunnel FET for Improved ON-current and subthreshold Swing

    Article • Electronics Letters, August 2019, the Institution of Engineering and Technology (the IET)

    Dr Yashvir Singh, Mr Tripuresh Joshi, Dr Balraj Singh

  2. High performance DCTG-LDMOS on InGaAs for RF power amplifier applications

    Article • Materials Science in Semiconductor Processing, December 2015, Elsevier

    Dr Yashvir Singh

  3. High-performance dual-channel InGaAs MOSFET for small signal RF applications

    Article • Electronics Letters, July 2015, the Institution of Engineering and Technology (the IET)

    Dr Yashvir Singh

  4. High figure-of-merit SOI power LDMOS for power integrated circuits

    Article • Engineering Science and Technology an International Journal, June 2015, Elsevier

    Dr Yashvir Singh

  5. A 100-V High-Performance SOI Trench LDMOS with Low Cell Pitch

    Article • Journal of Electronic Materials, May 2015, Springer Science + Business Media

    Dr Yashvir Singh

  6. Performance optimization of InGaAs power LDMOSFET

    Article • Microelectronics Journal, May 2015, Elsevier

    Dr Yashvir Singh

  7. Performance enhancement of InGaAs MOSFET using trench technology

    Article • March 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Yashvir Singh

  8. Lateral trench oxide Schottky rectifier on SOI for power integrated circuits

    Article • Journal of Computational Electronics, September 2014, Springer Science + Business Media

    Dr Yashvir Singh

  9. Performance enhancementof SOI power LDMOSFET using trench gate technology

    Article • May 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Yashvir Singh

  10. Simulation of a lateral trench power MOSFET on InGaAs for improved performance

    Article • March 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Yashvir Singh

  11. Performance evaluation of a lateral trench-gate power MOSFET on InGaAs

    Article • Journal of Computational Electronics, August 2013, Springer Science + Business Media

    Dr Yashvir Singh

  12. A Lateral Trench Dual Gate Power MOSFET on Thin SOI for Improved Performance

    Article • ECS Journal of Solid State Science and Technology, May 2013, The Electrochemical Society

    Dr Yashvir Singh

  13. High performance SOI lateral trench dual gate power MOSFET

    Article • December 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Yashvir Singh

  14. Inverse modeling of delta doped pseudomorphic high electron mobility transistors

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, January 2004, American Vacuum Society

    Dr Yashvir Singh

  15. A new low-loss lateral trench sidewall Schottky (LTSS) rectifier on SOI with high and sharp breakdown voltage

    Article • IEEE Transactions on Electron Devices, July 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Yashvir Singh

  16. Lateral thin-film Schottky (LTFS) rectifier on SOI: a device with higher than plane parallel breakdown voltage

    Article • IEEE Transactions on Electron Devices, January 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Yashvir Singh

  17. Novel lateral merged double Schottky (LMDS) rectifier: proposal and design

    Article • IEE Proceedings - Circuits Devices and Systems, January 2001, the Institution of Engineering and Technology (the IET)

    Dr Yashvir Singh

  18. A new 4H-SiC lateral merged double Schottky (LMDS) rectifier with excellent forward and reverse characteristics

    Article • IEEE Transactions on Electron Devices, January 2001, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Yashvir Singh