All Stories

  1. Resistive switching characteristics and mechanisms in silicon oxide memory devices

    Article • Physical Sciences Reviews, May 2016, De Gruyter

    Yao-Feng Chang

  2. A synaptic device built in one diode–one resistor (1D–1R) architecture with intrinsic SiOx-based resistive switching memory

    Article • Physical Sciences Reviews, April 2016, De Gruyter

    Yao-Feng Chang

  3. Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory

    Article • Applied Physics Letters, January 2016, American Institute of Physics

    Yao-Feng Chang

  4. Bidirectional voltage biased implication operations using SiOx based unipolar memristors

    Article • Applied Physics Letters, November 2015, American Institute of Physics

    Yao-Feng Chang

  5. Physical and chemical mechanisms in oxide-based resistance random access memory

    Article • Nanoscale Research Letters, March 2015, Springer Science + Business Media

    Yao-Feng Chang

  6. III-V Gate-wrap-around field-effect-transistors with high-k gate dielectrics

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Yao-Feng Chang

  7. Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabricated via nanosphere lithography

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Yao-Feng Chang

  8. Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

    Article • Nano Letters, December 2013, American Chemical Society (ACS)

    Yao-Feng Chang

  9. Effects of sidewall etching on electrical properties of SiOx resistive random access memory

    Article • Applied Physics Letters, November 2013, American Institute of Physics

    Yao-Feng Chang

  10. Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory

    Article • Applied Physics Letters, November 2013, American Institute of Physics

    Yao-Feng Chang

  11. Bi-modal failure phenomenon in resistive switching memory

    Article • Applied Physics Letters, July 2013, American Institute of Physics

    Yao-Feng Chang

  12. Comprehensive trap-level study in SiOx-based resistive switching memory

    Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Yao-Feng Chang

  13. Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

    Article • IEEE Electron Device Letters, April 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Yao-Feng Chang

  14. Study of ambient effect in active SiOx-based resistive switching memory

    Article • April 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Yao-Feng Chang

  15. Reduced Electroforming Voltage and Enhanced Programming Stability in Resistive Switching of SiO2 Thin Films

    Article • ECS Solid State Letters, March 2013, The Electrochemical Society

    Yao-Feng Chang

  16. Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory

    Article • Journal of Applied Physics, December 2012, American Institute of Physics

    Yao-Feng Chang

  17. Tristate Operation in Resistive Switching of $ \hbox{SiO}_{2}$ Thin Films

    Article • IEEE Electron Device Letters, December 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Yao-Feng Chang

  18. Excellent device performance of 3D In0.53Ga0.47As gate-wrap-around field-effect-transistors with high-k gate dielectrics

    Article • December 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Yao-Feng Chang

  19. Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory

    Article • Applied Physics Letters, October 2012, American Institute of Physics

    Yao-Feng Chang

  20. Study of Resistive Switching Characteristics on a Temperature-Sensitive FeOx-Transition Layer in a TiN/SiO2/FeOx/Fe Structure

    Article • ECS Journal of Solid State Science and Technology, September 2012, The Electrochemical Society

    Yao-Feng Chang

  21. Random Process of Filamentary Growth and Localized Switching Mechanism in Resistive Switching of SiOx Thin Films

    Article • ECS Journal of Solid State Science and Technology, August 2012, The Electrochemical Society

    Yao-Feng Chang

  22. Study of Electric Faucet Structure by Embedding Co Nanocrystals in a FeOx-Based Memristor

    Article • ECS Journal of Solid State Science and Technology, August 2012, The Electrochemical Society

    Yao-Feng Chang

  23. Study of polarity effect in SiOx-based resistive switching memory

    Article • Applied Physics Letters, July 2012, American Institute of Physics

    Yao-Feng Chang

  24. Study of SiOx-based complementary resistive switching memristor

    Article • June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Yao-Feng Chang

  25. The Effect of Plasma Treatment on Reducing Electroforming Voltage of Silicon Oxide RRAM

    Article • ECS Transactions, April 2012, The Electrochemical Society

    Yao-Feng Chang

  26. Memory switching properties of e-beam evaporated SiOx on N++ Si substrate

    Article • Applied Physics Letters, February 2012, American Institute of Physics

    Yao-Feng Chang

  27. Publisher’s Note: “Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure” [J. Appl. Phys. 110, 053703 (2011)]

    Article • Journal of Applied Physics, December 2011, American Institute of Physics

    Yao-Feng Chang

  28. Mechanism and characterizations studies of resistive switching effects on a thin FeOx-transition layer of the Ti/TiN/SiO2/FeOx/FePt structure by thermal annealing treatments

    Article • Materials Chemistry and Physics, December 2011, Elsevier

    Yao-Feng Chang

  29. Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure

    Article • Journal of Applied Physics, September 2011, American Institute of Physics

    Yao-Feng Chang

  30. Tunable resistance switching characteristics in a thin FeOx- transition layer part II: Sweeping voltage controlling

    Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Yao-Feng Chang

  31. Tunable resistance switching characteristics in a thin FeOx-transition layer part I: Compliance current controlling

    Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Yao-Feng Chang

  32. Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide–metal structure

    Article • Thin Solid Films, December 2010, Elsevier

    Yao-Feng Chang

  33. Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing

    Article • Applied Physics Letters, May 2010, American Institute of Physics

    Yao-Feng Chang

  34. A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures

    Article • Applied Physics Letters, February 2010, American Institute of Physics

    Yao-Feng Chang

  35. Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications

    Article • Applied Physics Letters, December 2009, American Institute of Physics

    Yao-Feng Chang

  36. A Synaptic Device Built in One Diode–One Resistor (1D–1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory

    Article • De Gruyter

    Yao-Feng Chang

  37. Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices

    Article • De Gruyter

    Yao-Feng Chang