Yao-Feng Chang
University of Texas at Austin
Graduate Student, Engineering & Technology
United States
My Publications
Resistive switching characteristics and mechanisms in silicon oxide memory devices
Physical Sciences Reviews
May 2016
A synaptic device built in one diode–one resistor (1D–1R) architecture with intrinsic S...
Physical Sciences Reviews
April 2016
Study of self-compliance behaviors and internal filament characteristics in intrinsic S...
Applied Physics Letters
January 2016
Bidirectional voltage biased implication operations using SiOx based unipolar memristors
Applied Physics Letters
November 2015
Physical and chemical mechanisms in oxide-based resistance random access memory
Nanoscale Research Letters
March 2015
III-V Gate-wrap-around field-effect-transistors with high-k gate dielectrics
June 2014
Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabrica...
June 2014
Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching M...
Nano Letters
December 2013
Effects of sidewall etching on electrical properties of SiOx resistive random access me...
Applied Physics Letters
November 2013
Investigation of edge- and bulk-related resistive switching behaviors and backward-scan...
Applied Physics Letters
November 2013
Bi-modal failure phenomenon in resistive switching memory
Applied Physics Letters
July 2013
Comprehensive trap-level study in SiO<inf>x</inf>-based resistive switching memory
June 2013
Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
IEEE Electron Device Letters
April 2013
Study of ambient effect in active SiO<inf>x</inf>-based resistive switching memory
April 2013
Reduced Electroforming Voltage and Enhanced Programming Stability in Resistive Switchin...
ECS Solid State Letters
March 2013
Understanding the resistive switching characteristics and mechanism in active SiOx-base...
Journal of Applied Physics
December 2012
Tristate Operation in Resistive Switching of <formula formulatype="inline"><tex Notatio...
IEEE Electron Device Letters
December 2012
Excellent device performance of 3D In<inf>0.53</inf>Ga<inf>0.47</inf>As gate-wrap-aroun...
December 2012
Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOxresistive r...
Applied Physics Letters
October 2012
Study of Resistive Switching Characteristics on a Temperature-Sensitive FeOx-Transition...
ECS Journal of Solid State Science and Technology
September 2012
Random Process of Filamentary Growth and Localized Switching Mechanism in Resistive Swi...
ECS Journal of Solid State Science and Technology
August 2012
Study of Electric Faucet Structure by Embedding Co Nanocrystals in a FeOx-Based Memristor
ECS Journal of Solid State Science and Technology
August 2012
Study of polarity effect in SiOx-based resistive switching memory
Applied Physics Letters
July 2012
Study of SiO<inf>x</inf>-based complementary resistive switching memristor
June 2012
The Effect of Plasma Treatment on Reducing Electroforming Voltage of Silicon Oxide RRAM
ECS Transactions
April 2012
Memory switching properties of e-beam evaporated SiOx on N++ Si substrate
Applied Physics Letters
February 2012
Publisher’s Note: “Investigation statistics of bipolar multilevel memristive mechanism ...
Journal of Applied Physics
December 2011
Mechanism and characterizations studies of resistive switching effects on a thin FeOx-t...
Materials Chemistry and Physics
December 2011
Investigation statistics of bipolar multilevel memristive mechanism and characterizatio...
Journal of Applied Physics
September 2011
Tunable resistance switching characteristics in a thin FeO<inf>x</inf>- transition laye...
June 2011
Tunable resistance switching characteristics in a thin FeO<inf>x</inf>-transition layer...
June 2011
Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing...
Thin Solid Films
December 2010
Improvement of resistance switching characteristics in a thin FeOx transition layer of ...
Applied Physics Letters
May 2010
A study of resistive switching effects on a thin FeOx transition layer produced at the ...
Applied Physics Letters
February 2010
Role of germanium in the reduced temperature dependence of Ti-based nanocrystals format...
Applied Physics Letters
December 2009
A Synaptic Device Built in One Diode–One Resistor (1D–1R) Architecture with Intrinsic S...
Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices
