All Stories

  1. 3-Way Doherty Power Amplifiers: Design Guidelines and MMIC Implementation at 28 GHz
  2. Efficiency versus linearity trade-off in an S-band class-AB power amplifier
  3. Continuous Inverse Class-F GaN Power Amplifier with 70% Efficiency over 1.4-2 GHz Bandwidth
  4. PAWR 2023 [RWW 2023]
  5. A 5-W GaN Doherty Amplifier for Ka-Band Satellite Downlink With 4-GHz Bandwidth and 17-dB NPR
  6. Low-Bias-Complexity Ku-band GaN MMIC Doherty Power Amplifier
  7. Compact GaN-based Stacked Cells for 5G Applications at 26 GHz
  8. K-band GaAs Doherty Power Amplifiers for microwave backhaul
  9. Broadband Class-J GaN Doherty Power Amplifier
  10. A GaN MMIC Stacked Doherty Power Amplifier For Space Applications
  11. AM/PM Characterization of Wideband Power Amplifiers
  12. Doherty Power Amplifiers for Ka-Band Satellite Downlink
  13. Watt-Level Ka-Band Integrated Doherty Power Amplifiers: Technologies and Power Combination Strategies Invited Paper
  14. Nonlinear Dynamic RF System Characterization: Envelope Intermodulation Distortion Profiles—A Noise Power Ratio-Based Approach
  15. Harmonic-Injection Class-EM/Fn Power Amplifier With Finite DC-Feed Inductance and Isolation Circuit
  16. A Novel Stacked Cell Layout for High-Frequency Power Applications
  17. Ka-band MMIC GaN Doherty Power Amplifiers: Considerations on Technologies and Architectures
  18. 3–20-GHz GaN MMIC Power Amplifier Design Through a COUT Compensation Strategy
  19. Watt-Level 21–25-GHz Integrated Doherty Power Amplifier in GaAs Technology
  20. Design of a Wideband Doherty Power Amplifier with High Efficiency for 5G Application
  21. Evaluation of a stacked‐FET cell for high‐frequency applications (invited paper)
  22. A Simple Method to Identify Parametric Oscillations in Power Amplifiers Using Harmonic Balance Solvers
  23. S-band hybrid amplifiers based on hydrogenated diamond FETs
  24. 3.1-3.6 GHz 22 W GaN Doherty Power Amplifier
  25. A 3-3.8 GHz Class-J GaN HEMT Power Amplifier
  26. Swept Notch NPR for Linearity Assessment of Systems Presenting Long-Term Memory Effects
  27. A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers
  28. A Wideband Highly Linear Distributed Amplifier Using Intermodulation Cancellation Technique for Stacked-HBT Cell
  29. Design strategy of a 2.8–3.6 GHz 20W GaN Doherty power amplifier
  30. Electro-magnetic Crosstalk Effects in a Millimeter-wave MMIC Stacked Cell
  31. GaN Doherty MMIC Power Amplifiers for Satellite Ka-band Downlink
  32. Guest Editorial
  33. Source/Load-Pull Characterisation of GaN on Si HEMTs with Data Analysis Targeting Doherty Design
  34. Optimisation of a Doherty power amplifier based on dual-input characterisation
  35. Thermal-aware GaN/Si MMIC design for space applications
  36. Linearity-aware design of Doherty power amplifiers
  37. A Ka-band Doherty Power Amplifier using an innovative Stacked-FET Cell
  38. Integrated Doherty power amplifiers for satellite systems: challenges and solutions
  39. Comparison of S-Band Analog and Dual-Input Digital Doherty Power Amplifiers
  40. Comparison of S-band Analog and Dual-Input Digital Doherty Power Amplifiers
  41. A Ku-band Compact MMIC PA based on Stacked GaAs pHEMT cells
  42. Dual-input driving strategies for performance enhancement of a doherty power amplifier
  43. K-band combined GaAs monolithic Doherty power amplifier
  44. Design of an 87% Fractional Bandwidth Doherty Power Amplifier Supported by a Simplified Bandwidth Estimation Method
  45. High Efficiency Power Amplifiers for Modern Mobile Communications: The Load-Modulation Approach
  46. A 4-W Doherty Power Amplifier in GaN MMIC Technology for 15-GHz Applications
  47. Power amplifier MMICs for 15 GHz microwave links in 0.25 üm GaN technology
  48. A Design Strategy for AM/PM Compensation in GaN Doherty Power Amplifiers
  49. Characterization of a high power GaN device for class E PA design with non-sinusoidal stimulus
  50. GaN Monolithic Power Amplifiers for Microwave Backhaul Applications
  51. A 0.6–3.8 GHz GaN Power Amplifier Designed Through a Simple Strategy
  52. A miniaturized wilkinson power divider for ultra wide-band operation
  53. Characterization-oriented design of a compact GaAs MMIC 3-stacked power cell
  54. Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach
  55. A comprehensive comparison between GaN MMIC Doherty and combined class-AB power amplifiers for microwave radio links
  56. Radio frequency and microwave linear and nonlinear characterization
  57. Switch
  58. GaN MMICs for microwave backhaul: Doherty vs. combined class-AB power amplifier
  59. GaN-MMIC Doherty power amplifier with integrated reconfigurable input network for microwave backhaul applications
  60. Stacked GaAs pHEMTs: Design of a K-band power amplifier and experimental characterization of mismatch effects
  61. The Doherty Power Amplifier: Review of Recent Solutions and Trends
  62. Hybrid Ag-based inks for nanocomposite inkjet printed lines: RF properties
  63. Linear GaN MMIC Combined Power Amplifiers for 7-GHz Microwave Backhaul
  64. K-Band GaAs MMIC Doherty Power Amplifier for Microwave Radio With Optimized Driver
  65. Frequency extension of system level characterization and predistortion setup for on-wafer microwave power amplifiers
  66. Improved phase linearity in source field plate AlGaN/GaN HEMTs
  67. Improved phase linearity in Source Field Plate AlGaN/GaN HEMTs
  68. Frequency extension of system level characterization and predistortion setup for on-wafer microwave power amplifiers
  69. Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios
  70. Effect of Load Modulation on Phase Distortion in Doherty Power Amplifiers
  71. Dual-Band GaN MMIC Power Amplifier for Microwave Backhaul Applications
  72. A 2-watt, 0.15-µm GaAs pHEMT stacked amplifier at 22 GHz
  73. System level characterization and digital predistortion of GaN MMIC Doherty power amplifiers for microwave point-to-point radios
  74. Experimental investigation of bias current and load modulation effects in phase distortion of GaN HEMTs
  75. An overview on recent developments in RF and microwave power H-terminated diamond MESFET technology
  76. A K-band GaAs MMIC Doherty power amplifier for point-to-point microwave backhaul applications
  77. Piezoresistive flexible composite for robotic tactile applications
  78. Evaluating GaN Doherty architectures for 4G Picocells, WiMax and microwave backhaul links
  79. FPGA-based digital predistortion of a 3.5 GHz GaN Doherty power amplifier
  80. Demonstration of inkjet-printed silver nanoparticle microstrip lines on alumina for RF power modules
  81. High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio Links
  82. GaN MMIC Doherty power amplifier solutions for backhaul microwave links
  83. Advanced GaN-based high frequency power amplifiers
  84. Assessment of silver nanoparticle inkjet-printed microstrip lines for RF and microwave applications
  85. Bandwidth extension of GaN Doherty power amplifier: Effect on power, efficiency and linearity
  86. 7 GHz MMIC GaN Doherty Power Amplifier With 47% Efficiency at 7 dB Output Back-Off
  87. Design and characterization of SiC varactor-based phase shifters
  88. X-band wideband 5W GaN MMIC power amplifier with large-signal gain equalization
  89. Ag nanoparticle-based inkjet printed planar transmission lines for RF and microwave applications: Considerations on ink composition, nanoparticle size distribution and sintering time
  90. 3.5 GHz WiMAX GaN doherty power amplifier with second harmonic tuning
  91. 3–3.6-GHz Wideband GaN Doherty Power Amplifier Exploiting Output Compensation Stages
  92. Accurate large-signal equivalent circuit of surface channel diamond FETs based on the Chalmers model
  93. Development of single-stage and doherty GaN-based hybrid RF power amplifiers for quasi-constant envelope and high peak to average power ratio wireless standards
  94. Simulation and design of OFET RFIDs through an analog/digital physics-based library
  95. A 22W 65% efficiency GaN Doherty Power Amplifier at 3.5 GHz for WiMAX applications
  96. RF power performance evaluation of surface channel diamond MESFETs
  97. SPICE Library for Low-Cost RFID Applications Based on Pentacene Organic FET
  98. A device-level analog and digital subsystem SPICE library for the design of low-cost pentacene OFET RFIDs
  99. A device-level analog and digital subsystem SPICE library for the design of low-cost pentacene OFET RFIDs
  100. GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project
  101. 7 GHz GaN MMIC power amplifier for Microwave Radio links with 45% drain efficiency in a wide power range
  102. RF power performance of submicron MESFET on hydrogen terminated polycrystalline diamond
  103. Behavioral modeling of GaN-based power amplifiers: Impact of electrothermal feedback on the model accuracy and identification
  104. Concurrent dual-band SiGe HBT power amplifier for Wireless applications
  105. RF Power Performance Evaluation of Surface Channel Diamond MESFET
  106. FPGA Implementation of Adaptive Baseband Predistortion for FET-Based Wireless Power Amplifiers
  107. Microwave measurements - Part III: Advanced non-linear measurements
  108. Base-band predistortion linearization scheme of high efficiency power amplifiers for wireless applications
  109. From device characterization to system level analysis of dual band PA design in SiGe technology
  110. Design approach to improve linearity and power performance of microwave FETs
  111. When self-consistency makes a difference
  112. GaN Device Technology: Manufacturing, Characterization, Modelling and Verification
  113. Linearity and efficiency optimisation in microwave power amplifier design
  114. Linearity and Efficiency Optimisation in Microwave Power Amplifier Design
  115. Self-Consistent Electrothermal Modeling of Class A, AB, and B Power GaN HEMTs Under Modulated RF Excitation
  116. Microwave Measurements Part II Non-linear Measurements
  117. Microwave measurements Part I: Linear Measurements
  118. Linearity and efficiency optimisation in microwave power amplifier design
  119. Advanced Neural Network Techniques for GaN-HEMT Dynamic Behavior Characterization
  120. Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs
  121. Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology
  122. GaN HEMT Technology Development Assessment through Nonlinear Characterization
  123. RF Dynamic Behavioral Model Suitable for GaN-HEMT Devices
  124. Theoretical investigation of GaN permeable base transistors for microwave power applications
  125. Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high-power applications
  126. Physics-based modeling of submicron GaN permeable base transistors
  127. High-quality porous-silicon buried waveguides
  128. Evaluation of GaN HEMT Technology Development Through Nonlinear Characterization
  129. Low loss laser-written channel waveguides in porous silicon